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Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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TLDR
By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
Abstract
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

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Citations
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Journal ArticleDOI

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

TL;DR: This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques.
Journal ArticleDOI

Modulating Optoelectronic Properties of Two-Dimensional Transition Metal Dichalcogenide Semiconductors by Photoinduced Charge Transfer.

TL;DR: It is shown that the photoluminescence (PL) emission can be selectively and reversibly engineered through energetically favorable electron transfer from photoexcited TMDCs to MPcs, further supporting the photoinduced charge transfer mechanism.
Journal ArticleDOI

van der Waals epitaxy: 2D materials and topological insulators

TL;DR: Van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and topological insulators (TIs) onto a variety of substrates for heterostructure and integrated circuit technologies.
Journal ArticleDOI

Simultaneous Exfoliation and Functionalization of 2H-MoS2 by Thiolated Surfactants: Applications in Enhanced Antibacterial Activity

TL;DR: It is found that the exfoliated MoS2 using thiolated ligands are functionalized with desired functionality and the processing scheme can be extended to other TMDs and the newly synthesized functionalized 2H-MoS2 exhibits better hemocompatibility, which makes it suitable for in vivo applications.
Journal ArticleDOI

Interface strain in vertically stacked two-dimensional heterostructured carbon-MoS2 nanosheets controls electrochemical reactivity.

TL;DR: It is demonstrated that local strain at a carbon-MoS2 interface in a vertically stacked 2D material directs the pathway for chemical storage in MoS2 on lithium metal insertion, implying that mechanical properties of interfaces in heterogeneous 2D materials can be leveraged to direct energetics of chemical processes relevant to a wide range of applications.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

The electronic properties of graphene

TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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