Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
TLDR
By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.Abstract:
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.read more
Citations
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Tunable free-electron X-ray radiation from van der Waals materials
Michael Shentcis,Adam K. Budniak,Xihang Shi,Raphael Dahan,Yaniv Kurman,Michael Kalina,Hanan Herzig Sheinfux,Mark Blei,Mark Kamper Svendsen,Yaron Amouyal,Sefaattin Tongay,Kristian Sommer Thygesen,Frank H. L. Koppens,Frank H. L. Koppens,Efrat Lifshitz,F. Javier García de Abajo,F. Javier García de Abajo,Liang Jie Wong,Ido Kaminer +18 more
TL;DR: In this article, the authors demonstrate the ability of van der Waals materials to serve as a platform for tunable X-ray generation when irradiated by moderately relativistic electrons available, for example, from a transmission electron microscope.
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Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review
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Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields
Jinsu Pak,Yeonsik Jang,Junghwan Byun,Kyungjune Cho,Taeyoung Kim,Jae-Keun Kim,Barbara Yuri Choi,Jiwon Shin,Yongtaek Hong,Seungjun Chung,Takhee Lee +10 more
TL;DR: This work explores the electrical breakdown phenomena originating from avalanche multiplication in MoS2 field-effect transistors with different layer thicknesses and channel lengths and finds the relationship between the critical electric field for avalanche breakdown and bandgap energy is well fitted to a power law curve in both monolayer and multilayer MoS1.
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A sub-thermionic MoS2 FET with tunable transport
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