Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
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TLDR
By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.Abstract:
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.read more
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References
More filters
Journal ArticleDOI
Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air.
TL;DR: As a result of thermal annealing in air, the thinning of MoS2 nanosheet is possible due to its oxidation to form MoO3 .
Journal ArticleDOI
Charge Scattering and Mobility in Atomically Thin Semiconductors
Nan Ma,Debdeep Jena +1 more
TL;DR: In this paper, a theoretical study shows that the low electron mobilities are caused by the scattering of electrons by charged impurities and points to high-ensuremath{kappa}$ dielectric coatings as a way to boost the mobilities of high-impurity samples.
Journal ArticleDOI
Where Does the Current Flow in Two-Dimensional Layered Systems?
Saptarshi Das,Joerg Appenzeller +1 more
TL;DR: The findings suggest that in a multilayer MoS2 field-effect transistor the "HOT-SPOT" of the current flow migrates dynamically between the layers as a function of the applied back gate bias and manifests itself in a rather unusual "contact resistance" that cannot be explained using the conventional models for metal-to-semiconductor contacts.
Journal ArticleDOI
Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
TL;DR: In this article, a plasmonic enhancement of photocurrent in MoS2 field effect transistors with gold nanoparticles was demonstrated, with significantly enhanced photocurrent peaked at the resonant wavelength around 540 nm.
Journal ArticleDOI
Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
Matin Amani,Matthew L. Chin,A. Glen Birdwell,Terrance O'Regan,Sina Najmaei,Zheng Liu,Pulickel M. Ajayan,Jun Lou,Madan Dubey +8 more
TL;DR: In this article, Molybdenum disulfide (MoS2) field effect transistors (FETs) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition.