Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
TLDR
By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.Abstract:
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.read more
Citations
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Journal ArticleDOI
Emergence of One-Dimensional Wires of Free Carriers in Transition-Metal-Dichalcogenide Nanostructures.
Marco Gibertini,Nicola Marzari +1 more
TL;DR: It is shown that polar discontinuities give rise to metallic states also at inversion domain boundaries, underscoring the potential of engineering transition-metal-dichalcogenide nanostructures for manifold applications in nano- and optoelectronics, spintronics, catalysis, and solar-energy harvesting.
Journal ArticleDOI
Materials properties of out-of-plane heterostructures of MoS2-WSe2 and WS2-MoSe2
TL;DR: In this article, the properties of out-of-plane heterostructures formed from the transition metal dichalcogenides, specifically MoS2-WSe2 and WS2-MoSe2, were investigated.
Journal ArticleDOI
Monolayer Transition Metal Dichalcogenides as Light Sources
Jiang Pu,Taishi Takenobu +1 more
TL;DR: This progress report provides an overview of recent advances in TMDC-based light-emitting devices discussed from several aspects in terms of device concepts, material designs, device fabrication, and their diverse functionalities.
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Van der Waals epitaxy of functional MoO2 film on mica for flexible electronics
Chun Hao Ma,Chun Hao Ma,Jheng Cyuan Lin,Heng Jui Liu,Thi Hien Do,Yuanmin Zhu,Thai Duy Ha,Qian Zhan,Jenh-Yih Juang,Qing He,Elke Arenholz,Po-Wen Chiu,Po-Wen Chiu,Ying-Hao Chu,Ying-Hao Chu +14 more
TL;DR: In this paper, a combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures of MoO2 films are similar to those of the bulk.
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Direct Observation of Valley-polarized Topological Edge States in Designer Surface Plasmon Crystals
Xiaoxiao Wu,Yan Meng,Yan Meng,Jingxuan Tian,Yingzhou Huang,Hong Xiang,Dezhuan Han,Weijia Wen,Weijia Wen +8 more
TL;DR: In this paper, a surface plasmon crystal comprising metallic patterns was demonstrated to become a valley-Hall photonic topological insulator by exploiting the mirror-symmetry-breaking mechanism.
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