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Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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TLDR
By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
Abstract
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

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Citations
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Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

TL;DR: In this article, the authors characterized fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors fabricated under inert gas conditions by utilizing graphene as source-drain electrodes and boron nitride as an encapsulation layer.
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Electrically-Transduced Chemical Sensors Based on Two-Dimensional Nanomaterials

TL;DR: Key advances in the application of 2D materials, from both a historical and analytical perspective, are summarized for four different groups of analytes: gases, volatile compounds, ions, and biomolecules.
Journal ArticleDOI

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.

TL;DR: In this article, the channel length scaling of ultrathin black phosphorus (BP) field effect transistors (FETs) was studied and a scheme for using various contact metals to change the transistor characteristics was discussed.
Journal ArticleDOI

Recent developments in emerging two-dimensional materials and their applications

TL;DR: In this paper, a review of 2D materials is presented, along with their advantages and disadvantages, and some effective device-fabrication approaches, such as heterostructure approaches, are applied to further enhance the properties of two-dimensional materials; their novel device applications and opportunities are also presented.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

The electronic properties of graphene

TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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