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Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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TLDR
By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
Abstract
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

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Citations
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Journal ArticleDOI

Synthesis of Molybdenum Disulfide Nanowire Arrays Using a Block Copolymer Template

TL;DR: In this paper, a simple route for the synthesis of arrays of sub-20nm wide molybdenum disulfide (MoS2) nanowires using a self-assembled cylinder forming poly(styrene-b-2-vinylpyridine) thin films is demonstrated.
Journal ArticleDOI

Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol

TL;DR: This work provides a detailed protocol on the efficient size selection in large quantities by liquid cascade centrifugation and the size and thickness quantification by statistical microscopic analysis (atomic force microscopy and transmission electron microscopy) and describes how mean nanosheets length and layer number can be extracted reliably from the extinction spectra.
Journal ArticleDOI

High throughput study on magnetic ground states with Hubbard U corrections in transition metal dihalide monolayers

TL;DR: In this article, the magnetic ground states for 90 transition metal dihalide monolayers TMX2 using density functional theory based on a collection of Hubbard U values are determined.
Journal ArticleDOI

Bandgap engineering of different stacking WS2 bilayer under an external electric field

TL;DR: In this article, the effect of external electric field on the bandgap of different stacking WS2 bilayers was systematically examined, and it was shown that for all cases, the most stable stacking order is the AB conformation, followed by the AA′ stacking fault, which is by only 2.06meV/supercell less stable than AB.
Journal ArticleDOI

Rapid synthesis of transition metal dichalcogenide few-layer thin crystals by the microwave-induced-plasma assisted method

TL;DR: In this article, microwave-induced plasminar assisted synthesis of WS2, MoS2, WSe2 and ReS2 was proposed, which is applicable to practically every direct reaction between metals and nonmetals if the nonmetal vapor pressure can reach a pressure of a few torr.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

The electronic properties of graphene

TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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