scispace - formally typeset
Open AccessJournal ArticleDOI

Fe dopant in ZnO: 2+ versus 3+ valency and ion-carrier s , p − d exchange interaction

Reads0
Chats0
TLDR
In this article, the authors analyzed the 3+ valency of transition metal ions in polycrystalline (Zn,Fe)O films with complementary theoretical and experimental studies.
Abstract
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+$U)$ indicate that the Fe ion is a relatively shallow donor. Its stable charge state is ${\mathrm{Fe}}^{2+}$ in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of ${\mathrm{Fe}}^{2+}$ to ${\mathrm{Fe}}^{3+}$ by nonintentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism, and magnetophotoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%. We find a predicted increase of $n$-type conductivity upon the Fe doping with the Fe donor ionization energy of $0.25\ifmmode\pm\else\textpm\fi{}0.02$ eV consistent with the results of theoretical considerations. Moreover, our magneto-optical measurements confirm the calculated nonvanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the ${\mathrm{Fe}}^{3+}$ ions in the ZnO, being so far an unsettled issue.

read more

Citations
More filters
Journal ArticleDOI

Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

TL;DR: In this paper, the authors reported on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations.
Journal ArticleDOI

Fine structure of an exciton coupled to a single Fe 2 + ion in a CdSe/ZnSe quantum dot

TL;DR: In this paper, a polarization-resolved photoluminescence study of the exchange interaction effects in a prototype system consisting of an individual ion and a single neutral exciton confined in a CdSe/ZnSe quantum dot is presented.
Journal ArticleDOI

Effect of yttrium substitution in Fe-doped ZnO nanoparticles: An EPR study

TL;DR: In this paper, the effect of Y3+ inclusion in ZnO nanoparticles doped with Fe3+ synthesized by the sol gel method was investigated, and the results showed an enhancement of the linewidth and the resonance field due to intrinsic defects in the hexagonal structure.
References
More filters
Journal ArticleDOI

Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
Journal ArticleDOI

Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI

Band theory and Mott insulators: Hubbard U instead of Stoner I.

TL;DR: A form for the exchange-correlation potential in local-density band theory, appropriate for Mott insulators, and finds that all late-3d-transition-metal monoxides, as well as the parent compounds of the high-${\mathit{T}$ compounds, are large-gap magnetic insulators of the charge-transfer type.
Journal ArticleDOI

Fundamentals of zinc oxide as a semiconductor

TL;DR: In this article, the status of zinc oxide as a semiconductor is discussed and the role of impurities and defects in the electrical conductivity of ZnO is discussed, as well as the possible causes of unintentional n-type conductivity.
Journal ArticleDOI

Native point defects in ZnO

TL;DR: In this paper, the authors performed a comprehensive first-principles investigation of point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the $\mathrm{LDA}+U$ approach for overcoming the band-gap problem.
Related Papers (5)