Journal ArticleDOI
Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films
Takao Shimizu,Takanori Mimura,Takanori Kiguchi,Takahisa Shiraishi,Toyohiko J. Konno,Yoshio Katsuya,Osami Sakata,Hiroshi Funakubo +7 more
Reads0
Chats0
TLDR
In this paper, the ferroelastic domain switching from the nonpolar b-axis to the polar c-axis oriented domain in 7-YO1.5-substituted HfO2 (YHO-7) epitaxial ferroelectric films is demonstrated.Abstract:
Herein, ferroelastic domain switching from the nonpolar b-axis to the polar c-axis oriented domain in 7%-YO1.5-substituted HfO2 (YHO-7) epitaxial ferroelectric films is demonstrated. Scanning transmission electron microscopy (STEM) indicates that the polarization of a pristine film deposited on a Sn-doped In2O3/(001)YSZ substrate by the pulsed laser deposition method tends to be along the in-plane direction to avoid a strong depolarization field with respect to the out-of-plane direction. Applying an electric field aids in ferroelastic domain switching in YHO-7 films. Such films exhibit ferroelectric characteristics with a relatively large saturated polarization around 30 μC/cm2 by polarization reorientation from the in-plane to the out-of-plane directions and an increased dielectric constant. The synchrotron X-ray diffraction measurements with a focused beam for the pristine and poled area indicate ferroelastic 90° domain switching as the odd number reflection disappears, which is only allowed in the nonpolar b-axis orientation. STEM observations also show a significant increase in the c-axis oriented domain. This observation of ferroelastic domain switching strongly supports the conclusion that the ferroelectricity of HfO2 originates from the non-centrosymmetric orthorhombic phase.read more
Citations
More filters
Journal ArticleDOI
Defects and Aliovalent Doping Engineering in Electroceramics.
TL;DR: The types of defects in electroceramics as well as characterization tools of defects are summarized and the effects of intrinsic and extrinsic defects on the material performances with the emphasis on dielectric, ferroelectric, and piezoelectric properties are highlighted.
Journal ArticleDOI
On the Origin of the Large Remanent Polarization in La:HfO2
Tony Schenk,Chris M. Fancher,Min Hyuk Park,Claudia Richter,Christopher Künneth,Alfred Kersch,Jacob L. Jones,Thomas Mikolajick,Uwe Schroeder +8 more
Journal ArticleDOI
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO 2 films by transmission-EBSD
Maximilian Lederer,Thomas Kampfe,Ricardo Olivo,David Lehninger,C. Mart,Sven Kirbach,Tarek Ali,P. Polakowski,L. Roy,Konrad Seidel +9 more
TL;DR: In this article, the local crystal phase and orientation of ferroelectric grains inside TiN/Hf0.5Zr 0.5O2/TiN have been studied by the analysis of the local electron beam scattering Kikuchi patterns, recorded in transmission.
Journal ArticleDOI
Progress and future prospects of negative capacitance electronics: A materials perspective
TL;DR: In this paper, the authors present a unique view of the field of negative capacitance electronics from the ferroelectric materials perspective, concluding that HfO2-based ferroelectrics are currently most promising for applications in electronics.
Journal ArticleDOI
Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films.
Shelby S. Fields,Sean W. Smith,Philip Ryan,Samantha T. Jaszewski,Ian A. Brummel,Alejandro Salanova,Giovanni Esteves,Steve Wolfley,Michael David Henry,Paul Davids,Jon F. Ihlefeld +10 more
TL;DR: Insight is provided into the role of electrodes on the performance of hafnium oxide-based ferroelectrics, mechanisms driving wake-up and fatigue, and a non-destructive means to characterize the phase changes accompanying polarization instabilities are demonstrated.
References
More filters
Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
Journal ArticleDOI
Above-bandgap voltages from ferroelectric photovoltaic devices
S. Y. Yang,Jan Seidel,Jan Seidel,Byrnes Steven J,Byrnes Steven J,Padraic Shafer,Chan-Ho Yang,Marta D. Rossell,Pu Yu,Ying-Hao Chu,James F. Scott,Joel W. Ager,Lane W. Martin,Ramamoorthy Ramesh,Ramamoorthy Ramesh +14 more
TL;DR: A fundamentally different mechanism for photovoltaic charge separation is reported, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap.
Journal ArticleDOI
Conduction at domain walls in oxide multiferroics
Jan Seidel,Lane W. Martin,Lane W. Martin,Qing He,Q. Zhan,Ying-Hao Chu,A. Rother,M. E. Hawkridge,Petro Maksymovych,Pu Yu,M. Gajek,Nina Balke,Sergei V. Kalinin,Sibylle Gemming,Feng Wang,Gustau Catalan,James F. Scott,Nicola A. Spaldin,Joseph Orenstein,Joseph Orenstein,Ramamoorthy Ramesh,Ramamoorthy Ramesh +21 more
TL;DR: The observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3) shows that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall.
Journal ArticleDOI
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller,T. S. Böscke,Uwe Schröder,Stefan Mueller,D. Bräuhaus,Ulrich Böttger,Lothar Frey,Thomas Mikolajick +7 more
TL;DR: A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
Journal ArticleDOI
Strain Tuning of Ferroelectric Thin Films
Darrell G. Schlom,Long Qing Chen,Chang-Beom Eom,Karin M. Rabe,Stephen K. Streiffer,Jean-Marc Triscone +5 more
TL;DR: In this paper, the effect of biaxial strain on the properties of epitaxial ferroelectric thin films and superlattices is discussed. But the results for single-layer thin films are not discussed.