scispace - formally typeset
Open AccessJournal ArticleDOI

Graphene: Status and Prospects

Andre K. Geim
- 19 Jun 2009 - 
- Vol. 324, Iss: 5934, pp 1530-1534
Reads0
Chats0
TLDR
This review analyzes recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.
Abstract
Graphene is a wonder material with many superlatives to its name. It is the thinnest known material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have zero effective mass, and can travel for micrometers without scattering at room temperature. Graphene can sustain current densities six orders of magnitude higher than that of copper, shows record thermal conductivity and stiffness, is impermeable to gases, and reconciles such conflicting qualities as brittleness and ductility. Electron transport in graphene is described by a Dirac-like equation, which allows the investigation of relativistic quantum phenomena in a benchtop experiment. This review analyzes recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.

read more

Content maybe subject to copyright    Report

Citations
More filters
Journal ArticleDOI

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Journal ArticleDOI

A roadmap for graphene

TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
Journal ArticleDOI

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

TL;DR: This Review describes how the tunable electronic structure of TMDs makes them attractive for a variety of applications, as well as electrically active materials in opto-electronics.
Journal ArticleDOI

Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?

TL;DR: It is anticipated that this review can stimulate a new research doorway to facilitate the next generation of g-C3N4-based photocatalysts with ameliorated performances by harnessing the outstanding structural, electronic, and optical properties for the development of a sustainable future without environmental detriment.
References
More filters
Journal ArticleDOI

Wafer-scale reduced graphene oxide films for nanomechanical devices.

TL;DR: Graphene oxide films' ability to withstand high in-plane tension as well as their high Q-values reveals that film integrity is enhanced by platelet-platelet bonding unavailable in pure graphite.
Journal ArticleDOI

Graphene-based atomic-scale switches.

TL;DR: This work reports the development of a nonvolatile memory element based on graphene break junctions, and demonstrates information storage based on the concept of rank coding, in which information is stored in the relative conductance of graphene switches in a memory cell.
Journal ArticleDOI

Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide

TL;DR: It is reported that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures.
Journal ArticleDOI

Room-temperature superfluidity in graphene bilayers

TL;DR: In this article, the Kosterlitz-Thouless temperatures of two-dimensional counterflow superfluids were shown to approach room temperature for electron-hole pair condensation.
Journal ArticleDOI

Gate-controlled non-volatile graphene-ferroelectric memory

TL;DR: In this paper, a non-volatile memory device in a graphene FET structure using ferroelectric gating is demonstrated, where the binary information is represented by the high and low resistance states of the working channels of the graphene working channels and is switched by controlling the polarization of the thin film using gate voltage sweep.
Related Papers (5)