Journal ArticleDOI
Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier
Thomas Quemerais,L. Moquillon,Vincent Huard,Jean-Michel Fournier,Philippe Benech,N. Corrao,Xavier Mescot +6 more
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TLDR
In this paper, the effects of RF hot-carrier stress on the characteristics of 60 GHz power amplifiers on a CMOS 65nm process are investigated, for the first time, in a reliability study.Abstract:
The effects of RF hot-carrier stress on the characteristics of 60-GHz power amplifiers (PAs) on a CMOS 65-nm process are investigated, for the first time, in this letter. A reliability study is made on a one-stage PA to validate an aging model and the degradation explanation. A drop of 16% of the gain, 17% of the 1-dB output compression point (OCP1 dB), and 17% of the Psat are measured at 60 GHz after 50 h of stress under Vdd = 1.65 V with Pin = 0 dBm and Vdd = 1.9 V with Pin = -10 dBm at 60-GHz frequency.read more
Citations
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Journal ArticleDOI
Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz
TL;DR: In this paper, the hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied and the experimental data show that the minimum noise figure increases ( ~2 dB) and the maximum small-signal power gain decreases (~3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.
Proceedings ArticleDOI
Excellent 22FDX Hot-Carrier Reliability for PA Applications
Tianbing Chen,Chi Zhang,Wafa Arfaoui,Abdellatif Bellaouar,S. Embabi,Germain Bossu,M. Siddabathula,Kok Wai Johnny Chew,S.N. Ong,M. Mantravadi,K. Barnett,J. Bordelon,R. Taylor,S. Janardhanan +13 more
TL;DR: In this paper, a 2-stack mmWave PA with fully depleted SOI (FDSOI) eliminates the lateral bipolar device and shows the excellent HCI (hot-carrier injection) reliability of 22FDX.
Journal ArticleDOI
Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process
TL;DR: In this paper, a hot carrier ageing model was used to predict the degradation of the characteristic parameters for multistage high-performance millimeter-wave power amplifier (PA) and a new PA was designed, taking into account the ageing effects, and was shown to be reliable during ten years.
Journal ArticleDOI
MOSFET degradation dependence on input signal power in a RF power amplifier
A. Crespo-Yepes,E. Barajas,Javier Martin-Martinez,Diego Mateo,Xavier Aragones,R. Rodriguez,Montserrat Nafria +6 more
TL;DR: In this article, an experimental set-up has been proposed to analyze the RF degradation on a Power Amplifier (PA) as a function of input signal power, and a direct relation between DC MOSFETs and RF PA (gain) parameters has been observed.
Journal ArticleDOI
Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability
Jiann-Shiun Yuan,Hsuan-Der Yen,Shuyu Chen,Ruey-Lue Wang,Guo-Wei Huang,Ying-Zong Juang,Chih-Ho Tu,Wen-Kuan Yeh,Jun Ma +8 more
TL;DR: In this paper, a cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation, and the measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations.
References
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Journal ArticleDOI
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
TL;DR: In this paper, a physical model involving the breaking of the ≡ Si s H bonds was proposed to explain the observed time dependence of MOSFET degradation and the observed channel field.
Journal ArticleDOI
Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
TL;DR: In this article, it was shown that MOSFET degradation is due to interface states generation by electrons having 3.7 eV and higher energies, and this critical energy and the observed time dependence was explained with a physical model involving the breaking of the = Si/sub s/H bonds.
Journal ArticleDOI
Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio
TL;DR: Sixty-gigahertz power (PA) and low-noise (LNA) amplifiers have been implemented, based on algorithmic design methodologies for mm-wave CMOS amplifiers, in a 90-nm RF-CMOS process with thick 9-metal-layer Cu backend and transistor fT/fMAX of 120 GHz/200 GHz.
Journal ArticleDOI
Power gain in feedback amplifiers, a classic revisited
TL;DR: A tutorial review of a classic paper by Samuel J. Mason (1954), which contained the first definition of a unilateral power gain for a linear two-port and the first proof that this grain is invariant with respect to linear lossless reciprocal four-port embeddings, is described.
Journal ArticleDOI
RF performance degradation in nMOS transistors due to hot carrier effects
TL;DR: In this paper, the hot electron induced RF performance degradation in multifinger gate nMOS transistors within the general framework of the degradation mechanism was reported, which can be explained by the transconductance degradation, resulting from the interface state generation.