Proceedings ArticleDOI
Live demonstration: A versatile, low-cost platform for testing large ReRAM cross-bar arrays
Alexantrou Serb,Radu Berdan,Ali Khiat,Christos Papavassiliou,Themistoklis Prodromakis +4 more
- pp 441-441
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TLDR
A MATLAB interface allows the user to load a binary image into the memory and observe the resulting internal memory states of each memristor in the array along with key performance metrics describing the speed and degree of success of the memory `write' operation.Abstract:
We demonstrate a practical application of memristors in a cross-bar memory array. The full set-up consists of only a PC, an mBED microcontroller and a PCB hosting external components and the memristor cross-bar chip. The system can be used for general purpose memory storage, but in this case we use it as a binary image storage device. A MATLAB interface allows the user to load a binary image into the memory and observe the resulting internal memory states of each memristor in the array along with key performance metrics describing the speed and degree of success of the memory `write' operation.read more
Citations
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Journal ArticleDOI
Real-time encoding and compression of neuronal spikes by metal-oxide memristors.
Isha Gupta,Alexantrou Serb,Ali Khiat,Ralf Zeitler,Stefano Vassanelli,Themistoklis Prodromakis +5 more
TL;DR: It is proved that information on spike amplitude and frequency can be transduced and stored in single devices as non-volatile resistive state transitions and shown that a memristive device array allows for efficient data compression of signals recorded by a multi-electrode array.
Journal ArticleDOI
Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices
Meng-Fan Chang,Albert Lee,Pin-Cheng Chen,Chrong Jung Lin,Ya-Chin King,Shyh-Shyuan Sheu,Tzu-Kun Ku +6 more
TL;DR: Trends in the design of device and circuits for on-chip nonvolatile memory using memrisitive devices as well as the challenges faced by researchers in its further development are examined.
Journal ArticleDOI
An RRAM Biasing Parameter Optimizer
TL;DR: In this paper, the authors proposed a novel technique for extracting biasing parameters, conducive to desirable switching behavior in a highly automated manner, thereby shortening the process development cycles, based on applying variable amplitude, pulse-mode stimulation on a test device in order to induce switching multiple times.
Journal ArticleDOI
A Cell Classifier for RRAM Process Development
TL;DR: An algorithm for identifying switchable devices, i.e., devices that can be programmed in distinct resistive states and that change their state predictably and repeatedly in response to input stimuli is presented.
Journal ArticleDOI
Sub 100 nW Volatile Nano-Metal-Oxide Memristor as Synaptic-Like Encoder of Neuronal Spikes
Isha Gupta,Alexantrou Serb,Ali Khiat,Ralf Zeitler,Stefano Vassanelli,Themistoklis Prodromakis +5 more
TL;DR: A new concept where the inherent volatile properties of a nano-scale memristive device are used to detect and compress information on neural spikes as recorded by a multielectrode array is presented, demonstrating the potential to build highly scalable, yet energy-efficient on-node processors for advanced neural interfaces.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI
Complementary resistive switches for passive nanocrossbar memories
TL;DR: A complementary resistive switch is introduced that consists of two antiserial memristive elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption.
Journal ArticleDOI
Stochastic memristive devices for computing and neuromorphic applications
TL;DR: In this paper, it was shown that in metal-filament based memristive devices, the switching can be fully stochastic and the distribution and probability of switching events can be well predicted and controlled.
Journal ArticleDOI
Memristive devices as parameter setting elements in programmable gain amplifiers
TL;DR: In this paper, the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element was investigated, including frequency and phase responses as the Memristor is programmed at different resistive states.