Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
The onset of transverse recirculations during flow of gases in horizontal ducts with differentially heated lower walls
TL;DR: In this article, a computational study has been performed to identify the onset of transverse buoyancy-driven recirculations during laminar flow of hydrogen and nitrogen in horizontal ducts with cool upper walls, and lower walls consisting of three sections: a cool upstream section, a heated middle section and a cool downstream section.
Journal ArticleDOI
OMVPE growth of InGaAsP materials for long wavelength detectors and emitters
TL;DR: In this paper, the epitaxial growth of InP/InGaAs PIN detectors and InGaAsP LEDs to be used for 1.3 μm fiber optic communication systems is described.
Journal ArticleDOI
Native‐oxide‐defined coupled‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure lasers
TL;DR: In this article, the authors presented data on the continuous-wave (cw) room-temperature (300 K) operation of multiple stripe AlxGa1−xAs−GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking.
Journal ArticleDOI
Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers
F. A. Kish,S. J. Caracci,Nick Holonyak,John Dallesasse,G. E. Höfler,R. D. Burnham,S. C. Smith +6 more
TL;DR: In this paper, the high-gap AlxGa1−xAs−GaAs upper confining layer is oxidized in a self-aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions.
Journal ArticleDOI
Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition.
TL;DR: The prominent existence of the undamaged monolayer graphene even after the growth of highly dense n-GaN NRs, as determined using Raman spectroscopy and high-resolution transmission electron microscopy, facilitated the excellent transport of the generated charge carriers through the photoconductive channel.
References
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Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
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Single-crystal gallium arsenide on insulating substrates
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Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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