Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
Timothy J. Trentler,Kathleen M. Hickman,Subhash C. Goel,A. M. Viano,Patrick C. Gibbons,William E. Buhro +5 more
TL;DR: In this article, a solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions.
Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Multiple quantum well (MQW) waveguide modulators
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Journal ArticleDOI
Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
Toru Sasaki,Sakae Zembutsu +1 more
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Journal ArticleDOI
Solution−Liquid−Solid Growth of Indium Phosphide Fibers from Organometallic Precursors: Elucidation of Molecular and Nonmolecular Components of the Pathway
Timothy J. Trentler,Subhash C. Goel,Kathleen M. Hickman,A. M. Viano,Michael Y. Chiang,Alicia M. Beatty,Patrick C. Gibbons,William E. Buhro +7 more
TL;DR: In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers.
References
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Journal ArticleDOI
MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasers
Isao Hino,Tohru Suzuki +1 more
TL;DR: In this paper, an entire composition range of good crystalline quality (AlxGa1−x)yIn1−yP solid solutions have been grown by low-pressure metalorganic chemical vapor deposition using trimethyl-aluminum, triethylgallium, triethyltimethylindium and cracked PH3.
Journal ArticleDOI
High-speed gallium-arsenide Schottky-barrier field-effect transistors
TL;DR: In this paper, it was shown that gallium arsenide is a well suited material for high-frequency field effect transistors and that the frequency limit for power amplification is considerably higher than for other known transistors.
Journal ArticleDOI
Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices
TL;DR: In this paper, the optimum conditions for the growth of high-quality AlxGa1_xAs by means of vapor phase epitaxy from organometallic compounds (OMVPE) are reported, and typical values of mobili-ty and radiative recombination efficiency are reported.
Journal ArticleDOI
Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth
TL;DR: In this paper, the effects of baffles on the incorporation of oxygen into organometallic vapor phase epitaxial AlxGa1−x As have been investigated, and a simple model can be used to describe this effect as being dependent on the adsorption of trimethylaluminum onto the graphite, followed by reaction with oxygen to remove, or getter it from the gas stream.
Journal ArticleDOI
Room‐temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition
TL;DR: In this paper, the authors achieved room-temperature pulsed laser operation of (Al0.3Ga0.7)0.5P/ Ga 0.5In 0.683 μm with a 22μm wide and 160μm long stripe.
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