Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
Timothy J. Trentler,Kathleen M. Hickman,Subhash C. Goel,A. M. Viano,Patrick C. Gibbons,William E. Buhro +5 more
TL;DR: In this article, a solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions.
Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Multiple quantum well (MQW) waveguide modulators
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Journal ArticleDOI
Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
Toru Sasaki,Sakae Zembutsu +1 more
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Journal ArticleDOI
Solution−Liquid−Solid Growth of Indium Phosphide Fibers from Organometallic Precursors: Elucidation of Molecular and Nonmolecular Components of the Pathway
Timothy J. Trentler,Subhash C. Goel,Kathleen M. Hickman,A. M. Viano,Michael Y. Chiang,Alicia M. Beatty,Patrick C. Gibbons,William E. Buhro +7 more
TL;DR: In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers.
References
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Journal ArticleDOI
Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5
TL;DR: In this paper, the pseudobinary III/V system GaAs1−ySby is well known to have a solid phase miscibility gap with a critical temperature of 751°C.
Journal ArticleDOI
Metal organic vapour phase epitaxy of indium phosphide
TL;DR: In this article, two variants of epitaxial growth have been used: (1) direct reaction of TMI with PH 3 and (2) an adduct reaction using an in situ prepared adduct of TMP and trimethylphosphine (TMP).
Journal ArticleDOI
Room‐temperature continuous operation of photopumped MO‐CVD AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well lasers
TL;DR: In this article, a room temperature continuous operation of photopumped AlxGa1−xAs•GaAs•AlxGa 1−xA−GaAs−Alx Ga1−XA−As quantum-well heterostructures embedded in Cu under diamond windows is demonstrated.
Journal ArticleDOI
Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition
TL;DR: In this paper, single-quantum-well AlxGa1−xAs−GaAs double-heterostructure laser diodes (Lz∼200 A) grown by metalorganic chemical vapor deposition are shown to operate continuously at 300 °K on the first (n=1) electron-to-heavy-hole (e→hh) or first(n′=1′) electronto-light-hole(e→lh) confined particle transitions (h/ω−Eg∼11 meV).
Journal ArticleDOI
The use of a metalorganic compound for the growth of InP-epitaxial layers
TL;DR: InP epitaxial layers have been grown by pyrolysis of a new metalorganic compound, a trimethylindium trimethyl-phosphene adduct as mentioned in this paper.
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