Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine
TL;DR: In this article, the authors compared the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources.
Journal ArticleDOI
Stability of 300 K continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well lasers grown on Si
Dennis G. Deppe,D. W. Nam,Nick Holonyak,K. C. Hsieh,Richard J. Matyi,Hisashi Shichijo,J. E. Epler,H. F. Chung +7 more
TL;DR: In this article, the stability data on a p−n (diode) AlxGa1−xAs−GaAs quantum well laser grown on Si indicates that continuous 300 K operation is possible for four or more hours.
Journal ArticleDOI
Organometallic vapor phase epitaxy (OMVPE)
William G. Breiland,Michael E. Coltrin,J. Randall Creighton,Hong Q. Hou,Harry K. Moffat,Jeffrey Y. Tsao +5 more
TL;DR: In this article, a case study of AlGaAs OMVPE in an RDR under conditions used for growing typical device heterostructures is presented, where the authors use typical growth conditions as a starting point for a discussion of fundamental physical and chemical phenomena, beginning with the fluid flow through a RDR and ending with chemical reactions on the surface.
Journal ArticleDOI
Experimental realization of a resonant tunneling transistor
TL;DR: In this paper, the authors reported experimental realization of a three-terminal negative differential resistance (NDR) device, which consists of a GaAs−AlxGa1−xAs double-barrier tunneling heterostructure, the current through which is controlled by an integrated vertical field effect transistor.
Patent
MOCVD method and apparatus
TL;DR: In an MOCVD reactor, gases are channeled around the periphery of a baffle plate (15) so as to flow radially inwardly along a slotted injection plate (16).
References
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Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
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Single-crystal gallium arsenide on insulating substrates
TL;DR: In this article, a single-crystal growth of gallium arsenide was achieved on a number of singlecrystal insulating oxide substrates, including sapphire, spinel, beryllium oxide, and thorium oxide.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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