Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
Timothy J. Trentler,Kathleen M. Hickman,Subhash C. Goel,A. M. Viano,Patrick C. Gibbons,William E. Buhro +5 more
TL;DR: In this article, a solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions.
Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Multiple quantum well (MQW) waveguide modulators
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Journal ArticleDOI
Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
Toru Sasaki,Sakae Zembutsu +1 more
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Journal ArticleDOI
Solution−Liquid−Solid Growth of Indium Phosphide Fibers from Organometallic Precursors: Elucidation of Molecular and Nonmolecular Components of the Pathway
Timothy J. Trentler,Subhash C. Goel,Kathleen M. Hickman,A. M. Viano,Michael Y. Chiang,Alicia M. Beatty,Patrick C. Gibbons,William E. Buhro +7 more
TL;DR: In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers.
References
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Journal ArticleDOI
Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAs
H. Terao,Haruo Sunakawa +1 more
TL;DR: In this article, the effects of oxygen (O 2 ) and water vapour (H 2 O) introduction on the properties of MOCVD grown GaAlAs have been investigated.
Journal ArticleDOI
Organometallic VPE Growth of InAs1-xSbx on InAs
Takashi Fukui,Yoshiji Horikoshi +1 more
TL;DR: In this article, the vapor-solid distribution relations for the group V elements were obtained and a simplified formula for the distribution relation, which assumes thermodynamical equilibrium, was fitted with experimental results, and lattice deformations rocking-curve measurements were made using X-ray double-crystal diffraction for (004) and (115) planes.
Journal ArticleDOI
THE GROWTH OF MAGNESIUM-DOPED GaAs BY THE OM-VPE PROCESS
TL;DR: Magnesium-doped GaAs has been grown by organometallic vapor phase epitaxy (OM-VPE) as discussed by the authors, and the material is of high electrical and optical quality; controllable doping over the range 1015 to 1019cm-3 is reproducibly attained.
Journal ArticleDOI
Prevention of InP surface decomposition in liquid phase epitaxial growth
TL;DR: In this article, an increase in P partial pressure compared to that at the InP liquidus is explained. But the increase is not due to increased solubility in In•Sn•P solutions.
Journal ArticleDOI
GaAs1−xSbx growth by OMVPE
TL;DR: In this article, the metastable alloys covering this entire composition range have been grown by organometallic vapor phase epitaxy (OMVPE) using trimethyl gallium, antimony and -arsenic as the source materials.
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