Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures
TL;DR: In this article, a 1-dimensional nanowire and a 0-dimensional quantum dot structure were integrated using an MOCVD system, and the formation of a high-efficiency quantum-sliding heterostructure and high-quality nan-ire structure was confirmed by FE-SEM and TEM measurements.
Book ChapterDOI
Wigner Function Modeling of the Resonant Tunneling Diode
TL;DR: In this article, a number of techniques have been developed which have allowed semiconductor devices to be fabricated with ever-smaller feature sizes using MBE and MOCVD epitaxial growth techniques, which leads to potential variations along one (growth) direction that vary on scales as small as one atomic layer.
Journal ArticleDOI
Atomic Layer Epitaxy of GaAs and InAs
TL;DR: In this article, the saturation behavior of growth of GaAs and InAs by atomic layer epitaxy is studied and the growth rate is found to be strongly dependent on alkyl exposure time for the same total exposure per cycle.
Book ChapterDOI
Reactions of Group V Metal Hydrides with Surfaces
TL;DR: In this paper, annealed GaAs and InP substrates with one edge in contact in an MOVPE reactor under H2 combined with AsH3, PH3 and mixtures of both.
Journal ArticleDOI
Computer automation of the Pulse Reactor, a pulse operated low‐pressure metal organic vapor phase epitaxy machine
TL;DR: Multilayer structures consisting of several GaAs and AlGaAs layers have been grown with good results, demonstrating not only the reliability, the real time behavior, and the correctness of the software package, but also the quality of the Pulse Reactor itself.
References
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Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
Journal ArticleDOI
Single-crystal gallium arsenide on insulating substrates
TL;DR: In this article, a single-crystal growth of gallium arsenide was achieved on a number of singlecrystal insulating oxide substrates, including sapphire, spinel, beryllium oxide, and thorium oxide.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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