Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
Timothy J. Trentler,Kathleen M. Hickman,Subhash C. Goel,A. M. Viano,Patrick C. Gibbons,William E. Buhro +5 more
TL;DR: In this article, a solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions.
Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Multiple quantum well (MQW) waveguide modulators
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Journal ArticleDOI
Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
Toru Sasaki,Sakae Zembutsu +1 more
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Journal ArticleDOI
Solution−Liquid−Solid Growth of Indium Phosphide Fibers from Organometallic Precursors: Elucidation of Molecular and Nonmolecular Components of the Pathway
Timothy J. Trentler,Subhash C. Goel,Kathleen M. Hickman,A. M. Viano,Michael Y. Chiang,Alicia M. Beatty,Patrick C. Gibbons,William E. Buhro +7 more
TL;DR: In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers.
References
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Journal ArticleDOI
High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition
TL;DR: In this paper, a deep Zn−diffused, 4-μm stripe thin p active layer GaAs/GaAlAs double heterostructure laser with threshold currents as low as 40 mA (length 220 μm), a characteristic temperature as large as 170 °C, and external differential quantum efficiencies as high as 80-90% were obtained.
Journal ArticleDOI
Residual Donor Impurities in MO-CVD Gallium Arsenide
TL;DR: In this paper, the donor and acceptor species in undoped MO-CVD GaAs with intrinsic photoexcitation have been precisely determined for various samples grown under different conditions and the relative concentrations of which depend on the partial pressure of AsH3.
Journal ArticleDOI
Electrical properties of Zn in metalorganic chemical vapor deposition Ga1−xAlxAs
TL;DR: In this article, the electrical properties of Zn-doped, p-type Ga(1−x)AlxAs films (0⩽x ⩽1.0) grown by MO•CVD on GaAs:Cr substrates were studied using Hall measurements over a wide range of temperature (77 to 420 °K).
Journal ArticleDOI
1.5 μm room-temperature pulsed operation of gainasp/inp double heterostructure grown by lp mocvd
TL;DR: In this article, the first successful room-temperature pulsed operation of a broad area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm, for an active layer thickness of 0.48 μm.
Journal ArticleDOI
Investigation of Sn-doped GaAs epilayers grown by low pressure metal-organic chemical vapor deposition
TL;DR: Tetraethyltin was used as a source of Sn dopant in homoepitaxial GaAs films grown from triethylgallium and arsine by low pressure metal-organic chemical vapor deposition.
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