Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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1012 bit/s optoelectronics technology
TL;DR: In this paper, the configurational, physical, and material constraints which prevent devices from operating at this speed, and can these constraints be altered? If 1012 bit/s can indeed be reached, what system functional building blocks should be generated?
Journal ArticleDOI
Thin upper‐confining layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes
S. J. Caracci,F. A. Kish,Michael R. Krames,M. J. Ries,Nick Holonyak,S. C. Smith,Robert D. Burnham +6 more
TL;DR: AlxGa1−xAs−As−GaAs•GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper confining layers (06, 045, 03, and 02 μm) are demonstrated in this paper.
Journal ArticleDOI
Resonance and switching in a native‐oxide‐defined AlxGa1−xAs‐GaAs quantum‐well heterostructure laser array
TL;DR: In this paper, a stripe-geometry coupled two-dimensional array is described that exhibits mode switching and multiple switching (ON-OFF twice) in the light power (L) versus current (I) characteristics with increasing current.
Journal ArticleDOI
Kinetics of the thermal decomposition of alkyl derivatives of Group III and V elements
TL;DR: In this article, the results of kinetic studies on the thermal decomposition of alkyl derivatives of Group III and V elements, used to obtain semiconducting epitaxial structures, are surveyed.
Journal ArticleDOI
Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x ‘‘barriers’’
G. S. Jackson,Dennis G. Deppe,K. C. Hsieh,Nick Holonyak,D. C. Hall,Robert D. Burnham,Robert L. Thornton,Thomas L. Paoli +7 more
TL;DR: The temperature dependence of threshold current of quantum well heterostructure (QWH) laser diodes is reduced by inserting (Si2)x(GaAs)1−x barriers in the active region as mentioned in this paper.
References
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Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
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Single-crystal gallium arsenide on insulating substrates
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Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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