Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Bistability and switching in a native‐oxide‐defined AlxGa1−xAs‐GaAs quantum‐well‐heterostructure laser coupled to a linear array
TL;DR: In this paper, a planar twin-stripe laser structure is defined by H2O vapor oxidation (425°C), in patterned form, of a significant thickness of the high-gap upper confining layer of an AlxGa1−xAs−GaAs quantum-well heterostructure.
Patent
Method for determining preferential deposition parameters for a thin layer of III-V material
TL;DR: In this paper, the influence of the deposition parameters on the crystallographic quality of a layer of semiconductor material of III-V type was studied, and the parameters studied are successively the deposition pressure, the deposition temperature and the deposited thickness of a sub-layer of semiconducting material of 3-V.
Journal ArticleDOI
Synthesis of Size-Tunable Indium Nitride Nanocrystals.
TL;DR: In this paper , a solution-based synthetic route to colloidal InN nanocrystals that produces phase-pure wurtzite InN with tunable photoluminescence is reported.
Journal ArticleDOI
A comparison of the mass spectrometric behaviour of trimethylindium adducts withN,N,N′-triathylethylenediamines and of the related dimethylindiumN,N,N′-trialkylethylenediamido derivatives
References
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Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
Journal ArticleDOI
Single-crystal gallium arsenide on insulating substrates
TL;DR: In this article, a single-crystal growth of gallium arsenide was achieved on a number of singlecrystal insulating oxide substrates, including sapphire, spinel, beryllium oxide, and thorium oxide.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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