Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
Timothy J. Trentler,Kathleen M. Hickman,Subhash C. Goel,A. M. Viano,Patrick C. Gibbons,William E. Buhro +5 more
TL;DR: In this article, a solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions.
Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Multiple quantum well (MQW) waveguide modulators
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Journal ArticleDOI
Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
Toru Sasaki,Sakae Zembutsu +1 more
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Journal ArticleDOI
Solution−Liquid−Solid Growth of Indium Phosphide Fibers from Organometallic Precursors: Elucidation of Molecular and Nonmolecular Components of the Pathway
Timothy J. Trentler,Subhash C. Goel,Kathleen M. Hickman,A. M. Viano,Michael Y. Chiang,Alicia M. Beatty,Patrick C. Gibbons,William E. Buhro +7 more
TL;DR: In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers.
References
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Journal ArticleDOI
The compositional grading of MOCVD-grown GaAs1−xPx via substrate temperature changes
TL;DR: In this article, the first application of MOCVD compositional grading by means of substrate temperature changes is reported for the case of GaAs−Px (0 ≤ x ≤ 0.30).
Journal ArticleDOI
Preliminary c.w. reliability measurements on GaAs-(GaAl)As stripe lasers grown by metal-organic c.v.d.
E.J. Thrush,J.E.A. Whiteaway +1 more
TL;DR: In this paper, a planar stripe-geometry laser was fabricated from a double heterostructure GaAs-(GaAl)As wafer grown by metal-organic chemical vapour deposition.
Journal ArticleDOI
MOCVD growth of AlAs1−xPx lattice-matched to GaAs and AlAs1−xPx-GaAs superlattices
Naoki Kobayashi,Takashi Fukui +1 more
TL;DR: In this article, an AlAs 0.96 P 0.04 -GaAs superlattices were fabricated to investigate the effect of strain at the heterointerface on the luminescence properties of multiple quantum well (MQW) heterostructures.
Journal ArticleDOI
Rotation of a waveform generator
TL;DR: In this paper, a recently suggested oscillator model which generates two triangular waves in quadrature is transformed by rotation to a new model that generates two trapezoidal waves also in quadrurature.
Journal ArticleDOI
High spectral response and photoluminescence of AlxGa1−xAs solar cell structures grown by metalorganic chemical vapor deposition (0.28≤x≤0.53)
M.J. Ludowise,W. T. Dietze +1 more
TL;DR: In this article, internal quantum efficiency (spectral response) data are presented for metalorganic chemical vapor deposition-grown AlxGa1−xAs (0.28≤x≤0.53) solar cell structures.
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