Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
Dennis G. Deppe,Nick Holonyak,W. E. Plano,V. M. Robbins,John Dallesasse,K. C. Hsieh,J. E. Baker +6 more
TL;DR: In this article, a model describing the diffusion of the donor Si in GaAs from grown-in dopant sources is presented and the effects of background impurities on Si diffusion and layer interdiffusion in AlxGa1−xAs-GaAs superlattices are described.
Proceedings ArticleDOI
Optical properties of metal nanoparticles
TL;DR: In this paper, the interaction of high power laser pulses with various dielectric materials containing metal nanoparticles is reviewed, and the excimer laser pulse modification of silver nanoparticles synthesized by ion implantation in soda-lime silicate glasses are considered.
Book ChapterDOI
Thin Film Deposition
TL;DR: The methods for the deposition of thin organic and inorganic films fall into three broad categories: chemical vapor deposition, physical vapor deposition (PVD), and overlapping techniques which combine both physical and chemical processes as mentioned in this paper.
Journal ArticleDOI
Fabrication and optical properties of semiconductor quantum wells and superlattices
Ernst O. Göbel,Klaus H. Ploog +1 more
Journal ArticleDOI
Alterations in the heme biosynthetic pathway from the III-V semiconductor metal, indium arsenide (InAs)
TL;DR: The results of these studies indicate that both the In and As moieties of InAs are biologically active following InAs exposure and that the enzymes in the heme pathway, such as ALAD, may have great utility as markers of exposure/toxicity for these agents.
References
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Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
Journal ArticleDOI
Single-crystal gallium arsenide on insulating substrates
TL;DR: In this article, a single-crystal growth of gallium arsenide was achieved on a number of singlecrystal insulating oxide substrates, including sapphire, spinel, beryllium oxide, and thorium oxide.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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