Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
Timothy J. Trentler,Kathleen M. Hickman,Subhash C. Goel,A. M. Viano,Patrick C. Gibbons,William E. Buhro +5 more
TL;DR: In this article, a solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions.
Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Multiple quantum well (MQW) waveguide modulators
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Journal ArticleDOI
Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
Toru Sasaki,Sakae Zembutsu +1 more
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Journal ArticleDOI
Solution−Liquid−Solid Growth of Indium Phosphide Fibers from Organometallic Precursors: Elucidation of Molecular and Nonmolecular Components of the Pathway
Timothy J. Trentler,Subhash C. Goel,Kathleen M. Hickman,A. M. Viano,Michael Y. Chiang,Alicia M. Beatty,Patrick C. Gibbons,William E. Buhro +7 more
TL;DR: In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers.
References
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Journal ArticleDOI
InP epitaxy with a new metalorganic compound
TL;DR: In this article, a trimethyl-indium trimethylphosphine adduct was used for the growth of InP epitaxial layers, which avoided the formation of unwanted polymer products during epitaxia growth.
Journal ArticleDOI
High‐efficiency (21.4%) Ga0.75In0.25As/GaAs (Eg=1.15 eV) concentrator solar cells and the influence of lattice mismatch on performance
TL;DR: In this paper, the spectral response and currentvoltage characteristics under concentration, of cells grown by organometallic vapor phase epitaxy on graded and ungraded lattice-constant buffer layers are compared.
Journal ArticleDOI
Electrical properties of epitaxial indium phosphide films grown by metalorganic chemical vapor deposition
TL;DR: In this paper, the charge transport properties of epitaxial indium phosphide films deposited on semi-insulating single-crystal InP:Fe substrates by metal-organic chemical vapor deposition were investigated by means of Hall effect and resistivity measurements made over a range of temperature from ∼420 °K down to liquid nitrogen temperature.
Journal ArticleDOI
Croissance D'InP par épitaxie vapeur organométallique
TL;DR: In this paper, a procedure for the MOVPE of InP is presented, which is applicable to the ternary (GaInAs) and quarternary InP semiconductors too.
Journal ArticleDOI
MOVPE of GaAs from the new adducts [CIR2Ga · AsEt2]2CH2 (R = Me, Et) and (C6F5)3 − n MenGa · AsEt3 (n = 0, 2)
TL;DR: In this paper, the authors reported new results on GaAs growth MOCVD using original Lewis acid-base adducts, which gave good GaAs epitaxial layers.
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