Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
Native‐oxide coupled‐stripe AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers
T. A. Richard,F. A. Kish,Nick Holonyak,John Dallesasse,K. C. Hsieh,M. J. Ries,P. Gavrilovic,Kathleen Meehan,J. E. Williams +8 more
TL;DR: In this article, a high performance nativeoxide coupled-stripe Al y Ga1−y As−GaAs•In x Ga 1−x As quantum wellheterostructure laser realized by the recently introduced simple process of ‘wet’’ oxidation (H2O vapor+N2,≳400 °C, 3 h) was presented.
Book ChapterDOI
Toxicology of the Group III–V Intermetallic Semiconductor, Gallium Arsenide
TL;DR: In this paper, the authors focus on the intermetallic compounds from group III (A1, Ga, In)-group V (P, As, Sb) elements and describe results from studies on gallium arsenide (GaAs).
Book ChapterDOI
Chapter 6 LP-MOCVD Growth, Characterization, and Application of InP Material
TL;DR: The chapter describes the energy-band structure and also introduces epitaxial growth techniques of indium phosphide (InP) and related compounds grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) growth technique.
Journal ArticleDOI
Demonstration of n-GaN:Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD
TL;DR: In this article, a 3-step growth method is developed for growing n-GaN:Si nanowires on a Si (111) substrate using the MOCVD process and this method is being reported for the first time.
Journal ArticleDOI
In vivo and in vitro modulation of carp (Cyprinus carpio L.) phagocyte oxidative burst activity by gallium.
TL;DR: Results indicate that the lethal toxicity of gallium for carp ofgallium is not as high as for other metal ions, however, gallium was immunosuppressive for carp at the highest concentrations used in vivo and in vitro.
References
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Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
Journal ArticleDOI
Single-crystal gallium arsenide on insulating substrates
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Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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