Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TLDR
In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.Abstract:
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.read more
Citations
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Journal ArticleDOI
A study of parasitic reactions between NH 3 and TMGa or TMAl
Changhua Chen,H. Liu,Daniel A. Steigerwald,W. Imler,C. P. Kuo,M. G. Craford,M. J. Ludowise,Steven D Lester,J. Amano +8 more
TL;DR: In this paper, the growth of AlGaN using organometallic vapor phase epitaxy has been studied as a function of reactor pressure in a horizontal reactor, and the results indicate that the parasitic reaction between TMGa and NH3 is not substantial in the reactor used in this study.
Book ChapterDOI
Phosphor materials for cathode-ray tubes
TL;DR: In this paper, the basic luminescent processes of the cathode-ray tube (CRT) were discussed, along with the specific excitation processes occurring under electron bombardment.
Journal ArticleDOI
Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures
Louis J. Guido,Nick Holonyak,K. C. Hsieh,R. W. Kaliski,W. E. Plano,Robert D. Burnham,Robert L. Thornton,J. E. Epler,Thomas L. Paoli +8 more
TL;DR: In this article, it was shown that the activation energy for Al−Ga interdiffusion, and thus layer disordering, is smaller for dielectric-encapsulated samples (∼3.5 eV) than for the case of capless annealing (4.7 eV).
Book ChapterDOI
Raman spectroscopy of vibrations in superlattices
Bernard Jusserand,Manuel Cardona +1 more
Journal ArticleDOI
Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide
TL;DR: It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect, so it is necessary to pay much greater attention to the human exposure of semiconductor materials.
References
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Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
Journal ArticleDOI
Single-crystal gallium arsenide on insulating substrates
TL;DR: In this article, a single-crystal growth of gallium arsenide was achieved on a number of singlecrystal insulating oxide substrates, including sapphire, spinel, beryllium oxide, and thorium oxide.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
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