Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme
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In this paper, the authors reported a new 900 V 4H-SiC JBSFET with an integrated JBS diode in the center area of the chip, which resulted in 30% reduction in SiC wafer area consumption in case of 10 A rating device.Abstract:
This letter reports a new 900 V 4H-SiC JBSFET containing an MOSFET with an integrated JBS diode in the center area of the chip. Both MOSFET and JBS diode structures utilize the same edge termination structure,which results in 30% reduction in SiC wafer area consumption in case of 10 A rating device. In order to form a Schottky contact for the JBS diode as well as ohmic contacts for n+ source and p+ body of the MOSFET,a simple metal process flow has been newly developed. It was found that Ni can simultaneously form ohmic contacts on n+ and p+ implanted regions while it remains a Schottky contact on the n-epitaxial drift layer when it is annealed at moderate temperature (900°C for 2 min). The proposed JBSFET was successfully fabricated using a nine-mask on 6-in 4H-SiC wafers.read more
Citations
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Defect engineering in SiC technology for high-voltage power devices
Tsunenobu Kimoto,Heiji Watanabe +1 more
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High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier
Fu-Jen Hsu,Cheng-Tyng Yen,Chien-Chung Hung,Hsiang-Ting Hung,Chwan-Ying Lee,Lurng-Shehng Lee,Yao-Feng Huang,Tzong-Liang Chen,Pei-Ju Chuang +8 more
TL;DR: A junction barrier controlled Schottky rectifier integrated silicon carbide MOSFET (SiC JMOS) was proposed in this paper, which merged a double implanted MOS FET (DMOS) and junction barrier control Schottkey diode (JBS) in a monolithic SiC device without any additional process and area penalty.
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SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode
Xuan Li,Xing Tong,Alex Q. Huang,Hong Tao,Kun Zhou,Yifan Jiang,Junning Jiang,Xiaochuan Deng,Xu She,Bo Zhang,Yourun Zhang,Qi Tian +11 more
TL;DR: In this article, a SiC trench MOSFET with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation.
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Numerical Simulation Study of a Low Breakdown Voltage 4H-SiC MOSFET for Photovoltaic Module-Level Applications
Francesco G. Della Corte,Giuseppe De Martino,Fortunato Pezzimenti,Giovanna Adinolfi,Giorgio Graditi +4 more
TL;DR: In this article, the authors predict the basic characteristics of a 4H-SiC power MOSFET tailored for low power, low voltage dc-dc converters for photovoltaic (PV) modules.
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PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices
TL;DR: The PRESiCETM as mentioned in this paper process was successful in making 1.2 kV rated state-of-the-art 4H-SiC power devices (MOSFETs, BiDFETs and JBS Rectifiers) in the X-Fab foundry.
References
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Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics
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Proceedings ArticleDOI
Novel SiC power MOSFET with integrated unipolar internal inverse MOS-channel diode
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