scispace - formally typeset
Journal ArticleDOI

On-chip cooling by superlattice-based thin-film thermoelectrics

Reads0
Chats0
TLDR
This is the first demonstration of viable chip-scale refrigeration technology and has the potential to enable a wide range of currently thermally limited applications.
Abstract
There is a significant need for site-specific and on-demand cooling in electronic, optoelectronic and bioanalytical devices, where cooling is currently achieved by the use of bulky and/or over-designed system-level solutions. Thermoelectric devices can address these limitations while also enabling energy-efficient solutions, and significant progress has been made in the development of nanostructured thermoelectric materials with enhanced figures-of-merit. However, fully functional practical thermoelectric coolers have not been made from these nanomaterials due to the enormous difficulties in integrating nanoscale materials into microscale devices and packaged macroscale systems. Here, we show the integration of thermoelectric coolers fabricated from nanostructured Bi2Te3-based thin-film superlattices into state-of-the-art electronic packages. We report cooling of as much as 15 degrees C at the targeted region on a silicon chip with a high ( approximately 1,300 W cm-2) heat flux. This is the first demonstration of viable chip-scale refrigeration technology and has the potential to enable a wide range of currently thermally limited applications.

read more

Citations
More filters
Journal ArticleDOI

2D Nanosheet Paint from Solvent Exfoliated Bi2Te3 Ink

TL;DR: In this paper, the intrinsic conductive properties of painted coatings using 2D and layered materials are not completely understood, and conductive polymer additives may mask underlying properties such as directional conductivity.
Journal ArticleDOI

Thermal conductivity in higher-order generalized hydrodynamics: Characterization of nanowires of silicon and gallium nitride

TL;DR: In this article, an analysis of the influence of geometry and size on the thermal conductivity in semiconductors, particularized to the study in Si and GaN, is presented.
Journal ArticleDOI

Nanograin-enhanced in-plane thermoelectric figure of merit in n-type SiGe thin films

TL;DR: In this article, phosphorus-doped SiGe thin films with improved thermoelectric properties were grown using low pressure chemical vapor deposition, and the effects of different annealing treatments, doping concentration, composition, and temperature on their performance were explored.
Journal ArticleDOI

Deposition of Nanocrystalline Bi2Te3 Films Using a Modified MOCVD System

TL;DR: In this paper, a modified metalorganic chemical vapor deposition (MOCVD) system was used to grow nanostructured Bi2Te3 films on GaAs substrates, and the effect of growth parameters on the structural properties were investigated.
Proceedings Article

Graphene heat spreader for thermal management of hot spots in electronic packaging

TL;DR: In this article, the thermal performance of a monolayer graphene heat spreader was evaluated at a heat flux of up to 800W/cm2 at a temperature of about 5 °C.
References
More filters
Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Journal ArticleDOI

High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

TL;DR: Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects, which makes these materials useful for cooling and power generation.
Journal ArticleDOI

High-performance heat sinking for VLSI

TL;DR: In this paper, a water-cooled integral heat sink for silicon integrated circuits has been designed and tested at a power density of 790 W/cm2, with a maximum substrate temperature rise of 71°C above the input water temperature.
BookDOI

CRC Handbook of Thermoelectrics

TL;DR: In this article, Rowe et al. proposed a method for reducing the thermal conductivity of a thermoelectric generator by reducing the carrier concentration of the generator, which was shown to improve the generator's performance.
Related Papers (5)