Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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New Materials and Processing Routes for Organic Electrochemical Transistors
TL;DR: In the field of bioelectronics, a multidisciplinary field that deals with the coupling of electronic devices with biological systems, the primary goal of bio-electronics is to exploit electronic devices for biological applications, such as implants, drug delivery systems, artificial skin, and sensors for in vivo or in vitro environments as discussed by the authors.
Journal ArticleDOI
32.3: Invited Paper: Large‐Area, Ultraflexible Organic AMLED Pixel Circuits Driven by Printed Organic Floating‐Gate Transistors
TL;DR: In this paper, an ultraflexible active matrix organic LED pixel circuit on 13-μm thin-film plastics for applications to medical sensors and treatments was demonstrated, which can compensate LED brightness variations and degradation for more than 6 months.
Book ChapterDOI
Organic Floating Gate Memory Structures
S.J. Fakher,Adam Sleiman,Ahmad I. Ayesh,Amal AlGhaferi,Michael C. Petty,Dagou A. Zeze,Dagou A. Zeze,M.F. Mabrook +7 more
TL;DR: The evolution of information and communication technologies in the last few years resulted in more demands for new data storage systems benefit from higher storage capacities, particularly for high definition TVs and smart phones.
Book ChapterDOI
Tactile sensors based on organic field-effect transistors
TL;DR: The integration of OFETs and pressure sensors will provide an ideal solution to achieve the commercialization of electronic skin and this feasibility has been introduced in this chapter.
References
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TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.