Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Organic diode with high rectification ratio made of electrohydrodynamic printed organic layers
TL;DR: In this paper, an all-printed organic diode to reveal a high rectification ratio (∼1.2 × 104) is proposed using organic heterojunction materials N, N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) and fullerene (C60), which has an effective area of 2 × 2 mm2.
Journal ArticleDOI
High performance, foldable, organic memories based on ultra-low voltage, thin film transistors
TL;DR: In this article, the authors report on the fabrication of highly flexible OTFT-based memory elements with excellent mechanical stability and high retention time, using a combination of two ultrathin AlOx and Parylene C as dielectric, and TIPS-Pentacene as the semiconductor, obtaining high performing low voltage transistors with mobility up to 0.4 cm 2 /V
Journal ArticleDOI
Laser-Printed Organic Thin-Film Transistors
Peter J. Diemer,Angela F. Harper,Muhammad Rizwan Niazi,Anthony J. Petty,John E. Anthony,Aram Amassian,Oana D. Jurchescu +6 more
TL;DR: In this paper, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported, making this a successful first demonstration of the potential of laser printing of organic semiconductors.
Journal ArticleDOI
Elucidation of ambient gas effects in organic nano-floating-gate nonvolatile memory
TL;DR: In this paper, the O2-induced acceptor-like trap states reduce the electron supply in pentacene during programming, limiting the electron trapping into the nano-floating-gate and thus suppressing the positive threshold voltage shift.
Journal ArticleDOI
Ternary Flexible Electro‐resistive Memory Device based on Small Molecules
TL;DR: The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties in this small molecule-based flexible ternary memory device for the first time.
References
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Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.