Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Analysis of temperature-dependent electrical transport properties of nonvolatile organic field-effect transistor memories based on PMMA film as charge trapping layer
Wen Li,Mingdong Yi,Haifeng Ling,Fengning Guo,Tao Wang,Tao Yang,Linghai Xie,Wei Huang,Wei Huang +8 more
TL;DR: In this paper, temperature-dependent electrical transport properties of nonvolatile organic field effect transistor (OFET) memories with Poly (methyl methacrylate) (PMMA) as a charge trapping layer were characterized at four typical temperatures (20 °C, 60°C, 80°C and −78.5°C).
Journal ArticleDOI
Tactile and Vision Perception for Intelligent Humanoids
TL;DR: The working mechanisms of tactile and visual sensing are explained, the application of intelligent humanoids in diverse scenarios are introduced, current challenges, and future trends are discussed to predict future trends.
Journal ArticleDOI
N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate
TL;DR: In this article, an n type nonvolatile memory devices were fabricated by implanting a bilayer (rGO sheets/Au NP) floating gates, using n-type polymer semiconductor, poly {[N, N′ bis (2 octyldodecyl) - naphthalene-1, 4, 5, 8 - bis (dicarboximide)-2,6-diyl] - alt - 5,5′ - (2, 2′ bithiophene)} [P(NDI2OD-T2
Journal ArticleDOI
Integration of an Organic Resistive Memory with a Pressure‐Sensitive Element on a Fully Flexible Substrate
Journal ArticleDOI
Electrochemical Stability of Self-Assembled Alkylphosphate Monolayers on Conducting Metal Oxides
O. Yildirim,M. Deniz Yilmaz,David N. Reinhoudt,Dave H. A. Blank,Guus Rijnders,Jurriaan Huskens +5 more
TL;DR: Impedance spectroscopy and Cyclic voltammetry showed that SAM-modified Nb-STO substrates have a significantly higher resistance than bare substrates.
References
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Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
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Ultralow-power organic complementary circuits
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Introduction to flash memory
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High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.