Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
Low switching voltage, high-stability organic phototransistor memory based on a photoactive dielectric and an electron trapping layer
Toan Thanh Dao,Heisuke Sakai,Heisuke Sakai,Kei Ohkubo,Shunichi Fukuzumi,Shunichi Fukuzumi,Hideyuki Murata +6 more
TL;DR: In this paper, an organic phototransistor memory with a photoactive dielectric layer was presented with a large on/off current ratio of ~105 for a retention time up to 2'×'106's with a reliability greater than 103 programming/erasing testing cycles.
Journal ArticleDOI
Carbon nanotube dual-material gate devices for flexible configurable multifunctional electronics
TL;DR: In this paper, a dual-material gate (DMG) device was constructed on a 2-μm-thick parylene substrate, which can serve as either transistors or diodes, with a sufficient rectification ratio of 8 × 10 4 and a diode-on-current of over 26μA.
Journal ArticleDOI
Rational Band Engineering of an Organic Double Heterojunction for Artificial Synaptic Devices with Enhanced State Retention and Linear Update of Synaptic Weight
TL;DR: These newly studied techniques for synaptic devices are expected to open up new possibilities for the realization of artificial synapses based on organic double-heterojunctions.
Journal ArticleDOI
Ultrasonic tactile sensor integrated with TFT array for force feedback and shape recognition
TL;DR: In this article, an ultrasonic tactile sensor for real-time contact force measurements and high-resolution shape recognition is proposed to enable safe and reliable robotic grasping of objects that may vary in compliance or texture.
Journal ArticleDOI
A novel approach to finding mechanical properties of nanocrystal layers.
TL;DR: The neo-Hookean coefficient (analogous to shear modulus at low stress/strain) of the silicon nanocrystal film is estimated to be 345 ± 23 kPa, which represents a novel approach to evaluating these properties.
References
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Ultralow-power organic complementary circuits
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Introduction to flash memory
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High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.