Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
Extraordinarily high conductivity of flexible adhesive films by hybrids of silver nanoparticle-nanowires.
TL;DR: Highly conductive flexible adhesive film was developed using micro-sized silver flakes (primary fillers), hybrids of silver nanoparticle-nanowires (secondary fillers) and nitrile butadiene rubber and the resistance change was smallest upon bending when the hybrids ofSilver nanowires were employed.
Journal ArticleDOI
Nitrile Substitution Effect on Triphenodioxazine-Based Materials for Liquid-Processed Air-Stable n-Type Organic Field Effect Transistors
Guillaume Gruntz,Hyunbok Lee,Lionel Hirsch,Frédéric Castet,Thierry Toupance,Alejandro L. Briseno,Yohann Nicolas +6 more
Journal ArticleDOI
Toward Highly Robust Nonvolatile Multilevel Memory by Fine Tuning of the Nanostructural Crystalline Solid-State Order
Yang Li,Yang Li,Cheng Zhang,Songtao Ling,Chunlan Ma,Jinlei Zhang,Yucheng Jiang,Run Zhao,Hua Li,Jianmei Lu,Qichun Zhang +10 more
TL;DR: In this article, the solid-state transition from disordered orientations to highly-uniform orientation within the ORM layer is facilely triggered via molecular strategic tailoring.
Journal ArticleDOI
Effect of Structure and Disorder on the Charge Transport in Defined Self-Assembled Monolayers of Organic Semiconductors
Thomas Schmaltz,Bastian Gothe,Andreas Krause,Susanne Leitherer,Hans-Georg Steinrück,Michael Thoss,Timothy Clark,Marcus Halik +7 more
TL;DR: Transistors based on SAMs of two molecules that consist of the organic p-type semiconductor benzothieno[3,2-b][1]benzothiophene (BTBT), linked to a C11 or C12 alkylphosphonic acid are constructed, showing that the size of the crystalline domains and the charge-transport properties vary considerably in the two systems.
Journal ArticleDOI
Three-Dimensional Integration Approach to High-Density Memory Devices
Ho-Jung Kim,Sanghun Jeon,Myoung-Jae Lee,Jae-Chul Park,Sang-beom Kang,Hyun-Sik Choi,Churoo Park,Hongsun Hwang,Chang-Jung Kim,Jai-Kwang Shin,U-In Chung +10 more
TL;DR: A high-density memory architecture that utilizes electronically active oxide thin-film transistors (TFTs) combined with memory elements such as vertical NAND and resistive random access memory devices to serve as a useful strategy for the development of high- density memory devices.
References
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Journal ArticleDOI
Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.