Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane
TL;DR: In this paper , a flexible and recyclable bio-based memory device using fish colloid as the resistive switching layer on a polyimine substrate, which affords reliable mechanical and electrical properties under repetitive conformal deformation operation.
Journal ArticleDOI
Advanced Nonvolatile Organic Optical Memory Using Self-Assembled Monolayers of Porphyrin–Fullerene Dyads
Lyubov A. Frolova,Yulia Furmansky,Alexander F. Shestakov,Nikita A. Emelianov,Paul A. Liddell,Devens Gust,Iris Visoly-Fisher,Pavel A. Troshin +7 more
TL;DR: In this paper , a self-assembled monolayers of donor-acceptor porphyrin-fullerene dyads were used as light-responsive triggers modulating the electrical characteristics of OFETs and thus paving the way to the development of advanced nonvolatile optical memory.
Journal ArticleDOI
Programmable Neuron Array Based on a 2-Transistor Multiplier Using Organic Floating-Gate for Intelligent Sensors
A. K. M. Mahfuzul Islam,Masamune Hamamatsu,Tomoyuki Yokota,Sunghoon Lee,Wakako Yukita,Makoto Takamiya,Takao Someya,Takayasu Sakurai +7 more
TL;DR: A 2-transistor multiplier using organic floating-gate pFET is proposed to reduce the area overhead and layout complexity due to the artificial neuron array, and selective floating-Gate programming and neuron operation are successfully demonstrated.
Journal ArticleDOI
Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics
TL;DR: In this paper , an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided.
Journal ArticleDOI
Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane.
TL;DR: In this article, a flexible and recyclable bio-based memory device using fish colloid as the resistive switching layer on a polyimine substrate, which affords reliable mechanical and electrical properties under repetitive conformal deformation operation.
References
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Journal ArticleDOI
Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.