Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
More filters
Journal ArticleDOI
Selective Solar-Blind UV Monitoring Based on Organic Field-Effect Transistor Nonvolatile Memories
TL;DR: In this paper, a nonvolatile memory based on organic field effect transistors (OFETs) was proposed to achieve solar-blind UV monitoring, which is well compatible with flexible substrates, and thus could be very useful for portable and/or wearable UV dosimetry.
Journal ArticleDOI
The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer
Mingdong Yi,Yuxiu Guo,Yuxiu Guo,Jialin Guo,Tao Yang,Yuhua Chai,Quli Fan,Linghai Xie,Wei Huang,Wei Huang +9 more
TL;DR: In this article, the effects of the mechanical bending on the electrical parameters of the flexible organic thin-film transistors were also systematically investigated, and it was shown that the variations of electrical parameters during the bending process were closely related to the distance effect of the spacing between stretched pentacene molecules and the doping effect of H2O and O2 which were induced by the bending strains.
Journal ArticleDOI
Schottky Barrier in Organic Transistors
TL;DR: In this paper, the Schottky barrier is discussed by comparison of the conventional metal-silicon contacts and the unconventional metal-organic contacts, where the special features in OFETs are underlined.
Journal ArticleDOI
Development of fullerenes and their derivatives as semiconductors in field-effect transistors: exploring the molecular design
TL;DR: In this article, the effect of these compounds on OFET device performance, especially on mobility and stability, is described and the relationship between the chemical structure and device performance is discussed.
Journal ArticleDOI
Controlled deposition of large-area and highly-ordered thin films: effect of dip-coating-induced morphological evolution on resistive memory performance
Yang Li,Yang Li,Yang Li,Cheng Zhang,Zhuang Li,Pei-Yang Gu,Zilong Wang,Hua Li,Jianmei Lu,Qichun Zhang +9 more
TL;DR: A scalable dip-coating technique is reported to precisely control nano-patterned films and resistive memory devices with a record reproducibility of 96%.
References
More filters
Journal ArticleDOI
Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.