Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
Flexible resistive switching device based on the TiO2 nanorod arrays for non-volatile memory application
TL;DR: In this article, a flexible resistive switching memory is developed based on TiO2 nanorod arrays with interstice between the nanorods to release the bending stress/strain.
Journal ArticleDOI
Trends and recent development of the microelectrode arrays (MEAs).
Longqian Xu,Chenxuan Hu,Qi Huang,Kai Jin,Ping Zhao,Dongping Wang,Wei Hou,Lihua Dong,Siyi Hu,Hanbin Ma +9 more
TL;DR: The history of microelectrode arrays (MEAs) is reviewed, different microfabrication techniques applied to modern MEAs in terms of their material characters, device properties and application scenarios are compared and the biocompatibility of different MEAs is discussed.
Journal ArticleDOI
Controlling Neutral Plane of Flexible Substrates by Asymmetric Impregnation of Glass Fabric for Protecting Brittle Films on Foldable Electronics
Journal ArticleDOI
Unidirectional and crystalline organic semiconductor microwire arrays by solvent vapor annealing with PMMA as the assisting layer
Xiaoting Zhu,Qingqing Wang,Xinzi Tian,Xiaotao Zhang,Yiyu Feng,Wei Feng,Rongjin Li,Wenping Hu +7 more
TL;DR: In this article, the polymer assisted solvent vapor annealing (PASVA) approach was used for the production of unidirectional and crystalline organic semiconductor microwire arrays.
Journal ArticleDOI
Compression of cross-linked poly(vinylidene fluoride-co-trifluoro ethylene) films for facile ferroelectric polarization.
Yu Jin Shin,Richard Hahnkee Kim,Hee Joon Jung,Seok Ju Kang,Youn Jung Park,Insung Bae,Cheolmin Park +6 more
TL;DR: A facile route for enhancing the ferroelectric polarization of a chemically cross-linked poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) film is demonstrated, attributed to highly ordered 20-nm-thick edge-on crystalline lamellae whose c-axes are aligned parallel to the substrate.
References
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Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
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Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
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Introduction to flash memory
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High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.