Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
Organic magnetoelectroluminescence for room temperature transduction between magnetic and optical information
Ferran Macià,Fujian Wang,Nicholas J. Harmon,Andrew D. Kent,Markus Wohlgenannt,Michael E. Flatté +5 more
TL;DR: In this paper, the authors demonstrate room temperature information transduction between a magnet and an organic light-emitting diode that does not require electrical current, based on control via the magnet's remanent field of the exciton recombination process in the organic semiconductor.
Journal ArticleDOI
PEDOT:PSS/CNT composites based ultra-stretchable thermoelectrics and their application as strain sensors
TL;DR: In this paper, PEDOT:PSS/CNT composites based ultra-stretchable thermoelectric (TE) films were fabricated by filtrating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT):PSS)/CNT composite composites onto an electrospun nanofiber substrate, in which polyurethane (PU) nanofibers acted as elastic skeleton and polycaprolactone (PCL) was used as binders between PED
Journal ArticleDOI
Functional high-k nanocomposite dielectrics for flexible transistors and inverters with excellent mechanical properties
Ye Zhou,Su-Ting Han,Zong-Xiang Xu,Xiong-Bo Yang,Hoi-Pui Ng,Long-Biao Huang,Vellaisamy A. L. Roy +6 more
TL;DR: In this paper, a polymer nanocomposite dielectrics based on n-octadecylphosphonic acid (ODPA) functionalized aluminum titanate (AT) nanoparticles as dopants in poly(4-vinylphenol) (PVP) was reported.
Journal ArticleDOI
All-brush-painted top-gate organic thin-film transistors
TL;DR: In this article, a brush-painted top-gate transistor with a maximum mobility of 0.14 cm2 V−1 s−1 was constructed with high quality conductive electrodes, semiconductive layers and dielectric layers.
Journal ArticleDOI
Foldable and Disposable Memory on Paper.
Byung-Hyun Lee,Dongil Lee,Hagyoul Bae,Hyejeong Seong,Seung-Bae Jeon,Myung-Lok Seol,Jin-Woo Han,M. Meyyappan,Sung Gap Im,Yang-Kyu Choi +9 more
TL;DR: Foldable organic memory on cellulose nanofibril paper with bendable and rollable characteristics is demonstrated, providing an effective platform for green, foldable and disposable electronics based on low cost and versatile materials.
References
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Journal ArticleDOI
Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.