Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layer on the performance of nonvolatile organic memory device
Jung-Min Kim,Ik-Soo Shin,Seok-Hyun Yoo,Jun-Ho Jeun,Ji-Hee Lee,Ayoung Kim,Han-Soo Kim,Ziyi Ge,Jong-In Hong,Jin Ho Bang,Yong-Sang Kim +10 more
TL;DR: In this paper, an organic memory device based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) insulating layer is demonstrated.
Journal ArticleDOI
Nonvolatile Memory Transistors Using Solution-Processed Zinc-Tin Oxide and Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene)
Sung-Min Yoon,Sung-Min Yoon,Soon-Won Jung,Shinhyuk Yang,Chun-Won Byun,Chi-Sun Hwang,Sang-Hee Ko Park,Hiroshi Ishiwara,Hiroshi Ishiwara +8 more
TL;DR: In this paper, a nonvolatile memory thin-film transistor (MTFT) using a solution-processed zinc-tin oxide (ZTO) semiconducting channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator was proposed.
Journal ArticleDOI
Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectrics
Daniel O. Hutchins,Orb Acton,Tobias Weidner,Nathan Cernetic,Joe E. Baio,David G. Castner,Hong Ma,Alex K.-Y. Jen +7 more
TL;DR: It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step.
Journal ArticleDOI
Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor
TL;DR: In this article, a lowvoltage multilevel organic thin-film memory device is proposed and demonstrated for nonvolatile data storage, where charge carrier density in the storage field was tuned up to four discrete levels in pentacene organic thinfilm transistor with poly(methyl methacrylate)-modified Al2O3 film as the dielectric layer through light assisted program procedures.
Journal ArticleDOI
Understanding temperature dependence of threshold voltage in pentacene thin film transistors
Qijun Sun,Xu Gao,Sui-Dong Wang +2 more
TL;DR: In this paper, the threshold voltage in the pentacene-based organic thin film transistors is found to increase with decreasing measuring temperature, indicating that the threshold voltages are dominated by the deep hole trapping in an approximately energy-independent trap distribution.
References
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Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
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Journal ArticleDOI
Ultralow-power organic complementary circuits
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Journal ArticleDOI
Introduction to flash memory
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Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.