Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
High-performance flexible organic thin-film transistor nonvolatile memory based on molecular floating-gate and pn-heterojunction channel layer
TL;DR: In this article, a flexible floating-gate structural organic thin-film transistor (FG-OTFT) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floatinggate/tunneling (I-FG/T) layer and a pn-heterojunction channel layer.
Journal ArticleDOI
Nonvolatile Transistor Memory Based on a High-k Dielectric Polymer Blend for Multilevel Data Storage, Encryption, and Protection
Xiaosong Wu,Xiaosong Wu,Shiyu Feng,Jinghui Shen,Wei Huang,Wei Huang,Cong Li,Caicong Li,Yuan Sui,Weiguo Huang +9 more
TL;DR: In this paper, nonvolatile transistor memories (NVTMs) are fabricated based on a polymer blend dielectric containing poly(pentafluorophenyl acrylate) (pPFPA) and branched-poly(ethylene imine) (bPEI).
Journal ArticleDOI
Synergistic effect in organic field-effect transistor nonvolatile memory utilizing bimetal nanoparticles as nano-floating-gate
TL;DR: In this paper, a solution-processed bimetal nano-floating-gate, with a combination of stabilized Ag and Pt nanoparticles, is utilized to achieve high-performance organic field-effect transistor nonvolatile memories.
Journal ArticleDOI
Thermal analysis of injectable, cellular-scale optoelectronics with pulsed power
Yuhang Li,Yuhang Li,Xiaoting Shi,Xiaoting Shi,Jizhou Song,Chaofeng Lü,Tae Il Kim,Tae Il Kim,Jordan G. McCall,Michael R. Bruchas,John A. Rogers,Yonggang Huang +11 more
TL;DR: This research presents a novel probabilistic approach to estimating the response of the immune system to laser-spot assisted, 3D image analysis of central nervous system injury.
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3D electronic and photonic structures as active biological interfaces
TL;DR: In this article, the authors summarized recent advances in the development of 3D functional biointerfaces, with a particular focus on electrically and optically active materials, devices, and structures.
References
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TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
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Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
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Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
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Introduction to flash memory
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High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.