Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
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Journal ArticleDOI
Suppression of the morphology mismatch at graphene/n-type organic semiconductor interfaces: a scanning Kelvin probe force microscopy investigation
TL;DR: In this article, the authors investigated the contact resistance effects in n-type organic field effect transistors (OFETs) based on perylene-diimide thin films and monolayer CVD graphene electrodes by using Scanning Kelvin Probe Force Microscopy (SKPFM).
Book ChapterDOI
Neuromorphic computing systems based on flexible organic electronics
TL;DR: This chapter reviews the development of organic neuromorphic devices, and highlights efforts to mimic essential brain functions, such as spiking phenomena, spatiotemporal processing, homeostasis, and functional connectivity, and demonstrates related applications.
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Emerging polymer electrets for transistor-structured memory devices and artificial synapses
TL;DR: This review was aimed to analyze existing polymer-based technologies for electrets used in memory devices and artificial synapses and analyze their performance, characteristics, applicability, and limitations.
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Fabrication of solution-processable OFET memory using a nano-floating gate based on phthalocyanine-cored star-shaped polymer
TL;DR: In this article , a solution-processed organic field effect transistor (OFET) memory device is fabricated using a blend film of 6,13-bis(triisopropylsilylethynyl)pentacene and phthalocyanine-cored star-shaped polystyrene.
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Ionic liquid thin layer-induced memory effects in organic field-effect transistors.
TL;DR: This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices.
References
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TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.