Journal ArticleDOI
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani,Tomoyuki Yokota,Ute Zschieschang,Hagen Klauk,Siegfried Bauer,Ken Takeuchi,Makoto Takamiya,Takayasu Sakurai,Takao Someya +8 more
TLDR
A sensor matrix is realized that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time by integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet.Abstract:
Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.read more
Citations
More filters
Journal ArticleDOI
Controlled performance of an organic transistor memory device with an ultrathin LiF blocking layer
TL;DR: In this paper, the performance of a novel organic pentacene transistor memory device with an ultrathin LiF blocking layer was investigated, and it was shown that the LiF thickness increased from 0 to 3 nm and the charge carrier mobility showed a threefold increase from 0.15 to 0.43 cm2 V−1 s−1 due to hole injection enhancement.
Proceedings ArticleDOI
100V AC power meter system-on-a-film (SoF) integrating 20V organic CMOS digital and analog circuits with floating gate for process-variation compensation and 100V organic PMOS rectifier
Koichi Ishida,Tsung-Ching Huang,Kentaro Honda,Tsuyoshi Sekitani,Hiroyoshi Nakajima,Hiroki Maeda,Makoto Takamiya,Takao Someya,Takayasu Sakurai +8 more
TL;DR: A 100-V AC power meter based on System-on-a-Film (SoF) concept is demonstrated and it is shown that organic devices on flexible films have great potential to realize low-cost power meters.
Journal ArticleDOI
Recent advances on thermal analysis of stretchable electronics
Yuhang Li,Yuyan Gao,Jizhou Song +2 more
TL;DR: In this article, the thermal management of stretchable inorganic inorganic electronics is reviewed with a focus on the thermal models and their comparison to experiments and finite element simulations, where the authors focus on applications involving human body and biological tissues where even 1-2°C temperature increase is not allowed.
Journal ArticleDOI
Modeling charge transport in C60-based self-assembled monolayers for applications in field-effect transistors.
TL;DR: This work investigates the conductance properties of C60-containing self-assembled monolayers, which are used in organic field-effect transistors, using a combination of molecular-dynamics simulations, semiempirical electronic structure calculations, and Landauer transport theory.
Journal ArticleDOI
Influence of grain size at first monolayer on bias-stress effect in pentacene-based thin film transistors
Yiwei Zhang,Dexing Li,Chao Jiang +2 more
TL;DR: In this paper, the authors systematically examined the initial growth of pentacene polycrystalline films under different growth rates and found that the bias stress performance of the fabricated pentacanene-based OTFTs was highly related to the initial gain size of the polycrystaline films, while larger grain size at the first deposition layer led to smaller threshold voltage shift.
References
More filters
Journal ArticleDOI
Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
Takao Someya,Yusaku Kato,Tsuyoshi Sekitani,Shingo Iba,Yoshiaki Noguchi,Yousuke Murase,Hiroshi Kawaguchi,Takayasu Sakurai +7 more
TL;DR: This work has successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
High-performance solution-processed polymer ferroelectric field-effect transistors
R.C.G. Naber,C. Tanase,Paul W. M. Blom,Gerwin H. Gelinck,Albert W. Marsman,Fredericus J. Touwslager,Sepas Setayesh,Dago M. de Leeuw +7 more
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.