Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
Yu Li,Yu Li,Shibing Long,Shibing Long,Qi Liu,Qi Liu,Hangbing Lv,Hangbing Lv,Ming Liu,Ming Liu +9 more
TLDR
Two-dimensional nanomaterials with excellent properties including and beyond graphene, are discussed with emphasis on performance improvement by their active roles as the switching layer, insertion layer, thin electrode, patterned electrode, and edge electrode.Abstract:
Reversible chemical and structural changes induced by ionic motion and reaction in response to electrical stimuli leads to resistive switching effects in metal-insulator-metal structures. Filamentary switching based on the formation and rupture of nanoscale conductive filament has been applied in non-volatile memory and volatile selector devices with low power consumption and fast switching speeds. Before the mass production of resistive switching devices, great efforts are still required to enable stable and reliable switching performances. The conductive filament, a bridge of microscopic metal-insulator-metal structure and macroscopic resistance states, plays an irreplaceable part in resistive switching behavior, as unreliable performance often originates from unstable filament behavior. In this Review, departing from the filamentary switching mechanism and the existing issues, recent advances of the switching performance improvement through the conductive filament modulation are discussed, in the sequence of material modulation, device structure design and switching operation scheme optimization. In particular, two-dimensional (2D) nanomaterials with excellent properties including and beyond graphene, are discussed with emphasis on performance improvement by their active roles as the switching layer, insertion layer, thin electrode, patterned electrode, and edge electrode, etc.read more
Citations
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Nonvolatile Memories Based on Graphene and Related 2D Materials.
Simone Bertolazzi,Paolo Bondavalli,Stephan Roche,Stephan Roche,Tamer San,Sung-Yool Choi,Luigi Colombo,Francesco Bonaccorso,Paolo Samorì +8 more
TL;DR: An overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories.
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Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems
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TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Synaptic Barristor Based on Phase-Engineered 2D Heterostructures
Woong Huh,Seonghoon Jang,Jae Yoon Lee,Donghun Lee,Jung Min Lee,Hong Gyu Park,Jong Chan Kim,Hu Young Jeong,Gunuk Wang,Chul Ho Lee +9 more
TL;DR: A new class of artificial synaptic architecture, a three‐terminal device consisting of a vertically integrated monolithic tungsten oxide memristor, and a variable‐barrier tungsen selenide/graphene Schottky diode, termed as a ‘synaptic barrister,’ are reported, which can implement essential synaptic characteristics, such as short‐term plasticity, long‐term Plasticity, and paired‐pulse facilitation.
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