Journal ArticleDOI
Silicon nanowire transistor with a channel width of 4 nm fabricated by atomic force microscope nanolithography
Javier Martínez,Ramses V. Martinez,Ricardo Garcia +2 more
- Vol. 8, Iss: 11, pp 3636-3639
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TLDR
An atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance is demonstrated.Abstract:
The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.read more
Citations
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Additive nanomanufacturing – A review
TL;DR: In this paper, the state-of-the-art within additive nanomanufacturing (ANM) technologies such as electrohydrodynamic jet printing, dip-pen lithography, direct laser writing, and several single particle placement methods such as optical tweezers and electrokinetic nanomanipulation are discussed.
Journal ArticleDOI
Thermoelectrics of Nanowires.
TL;DR: A comprehensive look at various aspects of thermoelectrics of NWs, including earlier theoretical and experimental work on quantum confinement effects and semimetal-to-semiconductor transition, surface engineering and complex heterostructures to enhance the carrier mobility and power factor, and the recent emergence of topological insulator NWs are provided.
Journal ArticleDOI
Big data and deep data in scanning and electron microscopies: deriving functionality from multidimensional data sets.
Alex Belianinov,Rama K. Vasudevan,Evgheni Strelcov,Chad A. Steed,Sang Mo Yang,Alexander Tselev,Stephen Jesse,Michael D. Biegalski,Galen M. Shipman,Christopher T. Symons,Albina Y. Borisevich,Rick Archibald,Sergei V. Kalinin +12 more
TL;DR: Here, several recent applications of the big and deep data analysis methods are reviewed to visualize, compress, and translate this multidimensional structural and functional data into physically and chemically relevant information.
Journal ArticleDOI
Quantum confinement induced performance enhancement in sub-5-nm lithographic Si nanowire transistors.
TL;DR: This study suggests simple (no additional doping) FETs using tiny top-down nanowires can deliver high performance for potential impact on both CMOS scaling and emerging applications such as biosensing.
Journal ArticleDOI
Review of nanostructured devices for thermoelectric applications.
TL;DR: This review paper will put a particular emphasis on nanostructured silicon, which represents a valid compromise between good thermoelectric properties on one side and material availability, sustainability, technological feasibility on the other side.
References
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Journal ArticleDOI
Synthesis and Fabrication of High‐Performance n‐Type Silicon Nanowire Transistors
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Nano-chemistry and scanning probe nanolithographies
TL;DR: This tutorial review presents the most promising probe-based nanolithographies that are based on the spatial confinement of a chemical reaction within a nanometer-size region of the sample surface.
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“Constructive Nanolithography”: Inert Monolayers as Patternable Templates for In‐Situ Nanofabrication of Metal–Semiconductor–Organic Surface Structures—A Generic Approach
Journal ArticleDOI
Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors
TL;DR: In this article, the Schottky barrier transistors with high on/off current ratio (on/off) were used to improve thermal emission leakage in silicon nanowire field effect transistors.
Journal ArticleDOI
Large area, dense silicon nanowire array chemical sensors
TL;DR: In this paper, a simple top-down approach based on nanoimprint lithography was proposed to create dense arrays of silicon nanowires over large areas, and the threshold voltage shift was proportional to the Hammett parameter and the concentration of the nitrobenzene and phenol analytes.