Journal ArticleDOI
Silicon nanowire transistor with a channel width of 4 nm fabricated by atomic force microscope nanolithography
Javier Martínez,Ramses V. Martinez,Ricardo Garcia +2 more
- Vol. 8, Iss: 11, pp 3636-3639
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TLDR
An atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance is demonstrated.Abstract:
The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.read more
Citations
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Journal ArticleDOI
Conductance microscopy of quantum dots weakly or strongly coupled to the conducting channel
K. Kolasiński,Bartłomiej Szafran +1 more
TL;DR: In this paper, the authors consider scanning gate conductance microscopy of an open quantum dot that is connected to the conducting channel using the wave function description of the quantum transport and a finite difference approach.
Journal ArticleDOI
Sub-30 nm patterning of molecular resists based on crosslinking through tip based oxidation
TL;DR: In this article, a noncontact o-SPL was applied to an engineered class of molecular resists in order to obtain crosslinking by electrochemical driven oxidation, which achieved sub-30nm lateral resolution.
Nano Fabrication of Oxide Patterns Using Atomic Force Microscopy on Titanium: Towards the Development of Nano Devices
N. Guillaume,Etienne Puyoo,M. Le Berre,David Albertini,Nicolas Baboux,Brice Gautier,Francis Calmon +6 more
TL;DR: In this article, the authors report on nano lithography for the fabrication of oxide patterns on titanium thin film using Atomic Force Microscopy (AFM), which consist of lines, dots, and surfaces.
Patent
Ultrafast and ultrasensitive nanowire photodetectors
TL;DR: In this paper, a photodetector is provided that includes a FET structure with a channel structure having one or more nanowire structures, and noble metal nanoparticles are positioned on the channel structure so as to produce a functionalized channel structure.
References
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Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
Yi Cui,Charles M. Lieber +1 more
TL;DR: The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.
Journal ArticleDOI
Coaxial silicon nanowires as solar cells and nanoelectronic power sources
Bozhi Tian,Xiaolin Zheng,Thomas J. Kempa,Ying Fang,Nanfang Yu,Guihua Yu,Jinlin Huang,Charles M. Lieber +7 more
TL;DR: These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.
Journal ArticleDOI
Label-free immunodetection with CMOS-compatible semiconducting nanowires
Eric Stern,James F. Klemic,David A. Routenberg,Pauline N. Wyrembak,Daniel B. Turner-Evans,Andrew D. Hamilton,David A. LaVan,Tarek M. Fahmy,Mark A. Reed +8 more
TL;DR: This work reports an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrates the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response.
Journal ArticleDOI
Electrical detection of single viruses
Fernando Patolsky,Gengfeng Zheng,Oliver Hayden,Melike Lakadamyali,Xiaowei Zhuang,Charles M. Lieber +5 more
TL;DR: Direct, real-time electrical detection of single virus particles with high selectivity by using nanowire field effect transistors is reported, suggesting potential for simultaneous detection of a large number of distinct viral threats at the single virus level.
Journal ArticleDOI
Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires
TL;DR: Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires with single stranded probe DNA molecules covalently immobilized on the nanowire surfaces, recognizing label-free complementary ss-DNA in sample solutions when the target DNA was hybridized with the probe DNA attached on the SiNW surfaces.