Journal ArticleDOI
Silicon nanowire transistor with a channel width of 4 nm fabricated by atomic force microscope nanolithography
Javier Martínez,Ramses V. Martinez,Ricardo Garcia +2 more
- Vol. 8, Iss: 11, pp 3636-3639
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TLDR
An atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance is demonstrated.Abstract:
The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.read more
Citations
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Journal ArticleDOI
Top-down fabrication of silicon nanowire devices for thermoelectric applications: properties and perspectives
TL;DR: In this paper, the most recent achievements in the field of device fabrication, based on nanostructured silicon, will be reviewed, illustrating both advantages and drawbacks, and compared with the recent theoretical works developed on the subject.
Journal ArticleDOI
Silicon nano-mechanical resonators fabricated by using tip-based nanofabrication
TL;DR: In this article, a tip-based nanofabrication (TBN) technique was used for the fabrication of silicon nano-mechanical resonators, where the key nanolithography step is performed by using a heated atomic force microscope tip deposited polystyrene nanowires.
Journal ArticleDOI
Fabrication of locally thinned down silicon nanowires
TL;DR: In this article, a top-down fabrication process was proposed to prepare locally thinned down silicon nanowire field effect devices at wafer-scale using tetramethylammonium hydroxide wet-etching.
Journal ArticleDOI
Unlocking the Origin of Superior Performance of a Si–Ge Core–Shell Nanowire Quantum Dot Field Effect Transistor
TL;DR: This work has identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart and investigates the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si- Ge core- shell nanowires quantumdot FETs.
Journal ArticleDOI
Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding
TL;DR: In this paper, the Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts, and the contact behavior was explained by diffusion theory.
References
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Journal ArticleDOI
Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
Yi Cui,Charles M. Lieber +1 more
TL;DR: The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.
Journal ArticleDOI
Coaxial silicon nanowires as solar cells and nanoelectronic power sources
Bozhi Tian,Xiaolin Zheng,Thomas J. Kempa,Ying Fang,Nanfang Yu,Guihua Yu,Jinlin Huang,Charles M. Lieber +7 more
TL;DR: These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.
Journal ArticleDOI
Label-free immunodetection with CMOS-compatible semiconducting nanowires
Eric Stern,James F. Klemic,David A. Routenberg,Pauline N. Wyrembak,Daniel B. Turner-Evans,Andrew D. Hamilton,David A. LaVan,Tarek M. Fahmy,Mark A. Reed +8 more
TL;DR: This work reports an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrates the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response.
Journal ArticleDOI
Electrical detection of single viruses
Fernando Patolsky,Gengfeng Zheng,Oliver Hayden,Melike Lakadamyali,Xiaowei Zhuang,Charles M. Lieber +5 more
TL;DR: Direct, real-time electrical detection of single virus particles with high selectivity by using nanowire field effect transistors is reported, suggesting potential for simultaneous detection of a large number of distinct viral threats at the single virus level.
Journal ArticleDOI
Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires
TL;DR: Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires with single stranded probe DNA molecules covalently immobilized on the nanowire surfaces, recognizing label-free complementary ss-DNA in sample solutions when the target DNA was hybridized with the probe DNA attached on the SiNW surfaces.