Journal ArticleDOI
Silicon nanowire transistor with a channel width of 4 nm fabricated by atomic force microscope nanolithography
Javier Martínez,Ramses V. Martinez,Ricardo Garcia +2 more
- Vol. 8, Iss: 11, pp 3636-3639
Reads0
Chats0
TLDR
An atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance is demonstrated.Abstract:
The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.read more
Citations
More filters
Journal ArticleDOI
Mechanical properties of graphene cantilever from atomic force microscopy and density functional theory
TL;DR: It is found that the Young's modulus and the threshold shearing force are dependent on the direction of applied force and the values are different for zigzag edge and armchair edge GNRs.
Journal ArticleDOI
Top down fabrication of long silicon nanowire devices by means of lateral oxidation
TL;DR: In this paper, the process for the fabrication of devices based on a single silicon nanowire with a triangular section is presented and discussed, where the top-down fabrication process exploits the properties of silicon anisotropic etching for the realization of very regular trapezoidal structures, that can be uniformly reduced in controlled way by means of lateral oxidation.
Journal ArticleDOI
Advancements and challenges in development of atomic force microscopy for nanofabrication
TL;DR: In this paper, the authors discuss the major challenges in atomic force microscopy (AFM) nanofabrication, and the potential solutions to these challenges are discussed. And then, specific approaches for improving the repeatability by equipment automation and for enhancing its throughput or productivity by parallel processing and speed increasing are suggested.
Journal ArticleDOI
Top-Down Fabrication of Fully CMOS-Compatible Silicon Nanowire Arrays and Their Integration into CMOS Inverters on Plastic
TL;DR: A route to the top-down fabrication of highly ordered and aligned silicon nanowire (SiNW) arrays with degenerately doped source/drain regions from a bulk Si wafer is presented and offers greater flexibility in device design for both high-performance and low-power functionality.
Journal ArticleDOI
Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography
Francisco M. Espinosa,Yu Kyoung Ryu,Kolyo Marinov,Dumitru Dumcenco,Andras Kis,Ricardo Garcia +5 more
TL;DR: In this article, the authors demonstrate a method to fabricate very narrow transistor channel widths on a single layer MoS2 flake connected to gold electrodes, which is applied to pattern insulating barriers on the flake.
References
More filters
Journal ArticleDOI
Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
Yi Cui,Charles M. Lieber +1 more
TL;DR: The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.
Journal ArticleDOI
Coaxial silicon nanowires as solar cells and nanoelectronic power sources
Bozhi Tian,Xiaolin Zheng,Thomas J. Kempa,Ying Fang,Nanfang Yu,Guihua Yu,Jinlin Huang,Charles M. Lieber +7 more
TL;DR: These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.
Journal ArticleDOI
Label-free immunodetection with CMOS-compatible semiconducting nanowires
Eric Stern,James F. Klemic,David A. Routenberg,Pauline N. Wyrembak,Daniel B. Turner-Evans,Andrew D. Hamilton,David A. LaVan,Tarek M. Fahmy,Mark A. Reed +8 more
TL;DR: This work reports an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrates the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response.
Journal ArticleDOI
Electrical detection of single viruses
Fernando Patolsky,Gengfeng Zheng,Oliver Hayden,Melike Lakadamyali,Xiaowei Zhuang,Charles M. Lieber +5 more
TL;DR: Direct, real-time electrical detection of single virus particles with high selectivity by using nanowire field effect transistors is reported, suggesting potential for simultaneous detection of a large number of distinct viral threats at the single virus level.
Journal ArticleDOI
Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires
TL;DR: Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires with single stranded probe DNA molecules covalently immobilized on the nanowire surfaces, recognizing label-free complementary ss-DNA in sample solutions when the target DNA was hybridized with the probe DNA attached on the SiNW surfaces.