Journal ArticleDOI
Silicon nanowire transistor with a channel width of 4 nm fabricated by atomic force microscope nanolithography
Javier Martínez,Ramses V. Martinez,Ricardo Garcia +2 more
- Vol. 8, Iss: 11, pp 3636-3639
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TLDR
An atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance is demonstrated.Abstract:
The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.read more
Citations
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Journal ArticleDOI
Traversing the "top-down/bottom-up" divide: molecular-scale lithography of self-assembled ribbons.
TL;DR: Graphitic (hexabenzocoronene-derived) molecules produces cholesteric ribbons which serve as molecular resists in a fluorine plasma, validating the concept of "molecular resists".
Proceedings ArticleDOI
IC compatible top down process for Silicon Nanowire fet arrays with three {100} surfaces for (BIO) chemical sensing
T. S. Y. Moh,Y. Maruyama,C. Shen,Gregory Pandraud,L.C.P.M. de Smet,Hien D. Tong,C.J.M. van Rijn,Ernst J. R. Sudhölter,Pasqualina M. Sarro +8 more
TL;DR: In this paper, a method for fabrication of Silicon Nanowire Field Effect Transistor (SiNW FET) arrays with three {100} surfaces via IC-compatible, top-down processes is presented.
Journal ArticleDOI
Low-energy electron exposure of ultrathin polymer films with scanning probe lithography
TL;DR: In this article, the authors describe a group of patterning techniques, wherein localized tip-sample interactions are utilized in order to directly or indirectly generate nanoscale features via a resist film.
Journal ArticleDOI
Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
A. Price,Antonio Martinez +1 more
TL;DR: In this article, the impact of electron-phonon scattering on the transfer characteristic of a gate-all-around nanowire (GaAs) field effect transistor (NWFET) has been thoroughly investigated.
Electronic Transport Properties of Junctionless Lateral Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscope Nanolithography
Farhad Larki,Sabar D. Hutagalung,Arash Dehzangi,Elias Saion,Alam Abedini,A. Makarimi Abdullah,Mohd Nizar Hamidon,Jumiah Hassan +7 more
TL;DR: In this paper, the fabrication, electrical characteristics, and effect of lateral gates in a junctionless silicon nanowire transistor was presented, where the output current is controlled by channel doping and mobility of carriers instead of gate capacitance and it basically uses bulk conduction instead of surface channel conduction.
References
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Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
Yi Cui,Charles M. Lieber +1 more
TL;DR: The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.
Journal ArticleDOI
Coaxial silicon nanowires as solar cells and nanoelectronic power sources
Bozhi Tian,Xiaolin Zheng,Thomas J. Kempa,Ying Fang,Nanfang Yu,Guihua Yu,Jinlin Huang,Charles M. Lieber +7 more
TL;DR: These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.
Journal ArticleDOI
Label-free immunodetection with CMOS-compatible semiconducting nanowires
Eric Stern,James F. Klemic,David A. Routenberg,Pauline N. Wyrembak,Daniel B. Turner-Evans,Andrew D. Hamilton,David A. LaVan,Tarek M. Fahmy,Mark A. Reed +8 more
TL;DR: This work reports an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrates the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response.
Journal ArticleDOI
Electrical detection of single viruses
Fernando Patolsky,Gengfeng Zheng,Oliver Hayden,Melike Lakadamyali,Xiaowei Zhuang,Charles M. Lieber +5 more
TL;DR: Direct, real-time electrical detection of single virus particles with high selectivity by using nanowire field effect transistors is reported, suggesting potential for simultaneous detection of a large number of distinct viral threats at the single virus level.
Journal ArticleDOI
Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires
TL;DR: Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires with single stranded probe DNA molecules covalently immobilized on the nanowire surfaces, recognizing label-free complementary ss-DNA in sample solutions when the target DNA was hybridized with the probe DNA attached on the SiNW surfaces.