Proceedings ArticleDOI
Strong correlation between dielectric reliability and charge trapping in SiO/sub 2//Al/sub 2/O/sub 3/ gate stacks with TiN electrodes
A. Kerber,E. Cartier,Robin Degraeve,Luigi Pantisano,Philippe Roussel,Guido Groeseneken +5 more
- pp 76-77
Reads0
Chats0
TLDR
In this paper, the authors show that electron trap generation in the bulk of the Al/sub 2/O/sub 3/ films dominates, whereas hole trap near the Si substrate is observed for gate injection.Abstract:
Polarity-dependent charge trapping and defect generation have been observed in SiO/sub 2//Al/sub 2/O/sub 3/ gate stacks with TiN electrodes. For the substrate injection case, electron trapping in the bulk of the Al/sub 2/O/sub 3/ films dominates, whereas hole trap near the Si substrate is observed for gate injection. This asymmetry in defect creation causes an asymmetry in oxide reliability. For gate injection, reliability is limited by the thin SiO/sub 2/ interfacial layer, yielding low beta values, independent of the Al/sub 2/O/sub 3/ thickness. For substrate injection, reliability is limited by electron trap generation in the bulk of the Al/sub 2/O/sub 3/ film, yielding a strong thickness dependence of the beta values, as expected from the percolation model and as observed in SiO/sub 2/ layers of similar thickness.read more
Citations
More filters
Journal ArticleDOI
Influence of Al/sub 2/O/sub 3/ dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method
TL;DR: In this paper, trap density depth profiling based on charge-pumping measurements were applied to Al/sub 2/O/sub 3/ high-k dielectric transistors.
Proceedings ArticleDOI
Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics
A. Shanware,Mark R. Visokay,James J. Chambers,Antonio L. P. Rotondaro,H. Bu,M. J. Bevan,Rajesh Khamankar,Shian Aur,P.E. Nicollian,Joe W. McPherson,Luigi Colombo +10 more
TL;DR: In this paper, the effect of charge trapping on the threshold voltage and transistor drive current of NMOS devices made with HfSiON gate dielectric was investigated and it was shown that the physics of the charge trapping in HnSiON is unique and follows logarithmic dependence with time rather than usual exponential dependence.
Journal ArticleDOI
On the Charge Sheet Superjunction (CSSJ) MOSFET
S. Srikanth,Shreepad Karmalkar +1 more
TL;DR: In this paper, a simple analytical model is developed for the drain-source capacitance of the charge sheet superjunction (CSSJ) MOSFET, and the model is shown to apply to the Superjunction as well.
Proceedings ArticleDOI
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics
Udo Schwalke,K. Boye,Gisela Hess,G. Muller,Klaus Haberle,Rudolf Heller,T. Rulan,Gerhard Tzschockel,J. Osten,Andreas Fissel,H.-J. Mussig +10 more
TL;DR: In this paper, the integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric was reported and key process steps which are compatible with the highk material have been developed and were applied for realisation of MOS sructures.
Journal ArticleDOI
On the Impact of Defects Close to the Gate Electrode on the Low-Frequency $\hbox{1}/f$ Noise
TL;DR: In this article, the impact of defects close to the gate electrode side on low-frequency 1/f noise in the drain and gate current was studied, where defects are selectively introduced by deposition of a submonolayer of HfO2 dielectric, which induce a large Fermi-level pinning on the gate.
References
More filters
Journal ArticleDOI
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
Robin Degraeve,Guido Groeseneken,R. Bellens,J. L. Ogier,M. Depas,Philippe Roussel,Herman Maes +6 more
TL;DR: In this paper, a percolation-based model for intrinsic breakdown in thin oxide layers is proposed, which can explain the experimentally observed statistical features of the breakdown distribution, such as the increasing spread of the Q/sub BD/-distribution for ultrathin oxides.
Journal ArticleDOI
Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films
D. J. DiMaria,James H. Stathis +1 more
TL;DR: In this article, hot holes are demonstrated to produce bulk and interfacial defect sites in silicon dioxide layers of metal-oxide-semiconductor structures, and the results presented here are inconsistent with current reliability models which use anode hole injection to explain destructive breakdown of the oxide layer in n-channel field effect transistors where hole currents are small relative to electron currents.
Proceedings ArticleDOI
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications
Douglas A. Buchanan,Evgeni Gusev,Eduard A. Cartier,Harald F. Okorn-Schmidt,Kern Rim,Michael A. Gribelyuk,Anda Mocuta,Atul C. Ajmera,Matthew Copel,Supratik Guha,Nestor A. Bojarczuk,Alessandro C. Callegari,Christopher P. D'Emic,P. Kozlowski,K.K. Chan,R.J. Fleming,Paul C. Jamison,I. Brown,R. Arndt +18 more
TL;DR: In this paper, the integration of Al/sub 2/O/sub 3/ gate-dielectrics into a sub 0.1 /spl mu/m n-MOS process using polycrystalline silicon gates was demonstrated.