Showing papers on "Nanolaser published in 2019"
TL;DR: Dynamical nonlinear image tuning is experimentally demonstarted via polarization and wavelength control, paving the way for nanophotonics applications such as tunable displays, nonlinear holograms, tunable nanolaser, and ultrathin nonlinear nanodevices with various functionalities.
Abstract: Dynamical tuning of the nonlinear optical wavefront allows for a specific spectral response of predefined profiles, enabling various applications of nonlinear nanophotonics. This study experimentally demonstrates the dynamical switching of images generated by an ultrathin silicon nonlinear metasurface supporting a high-quality leaky mode, which is formed by partially breaking a bound-state-in-the-continuum (BIC) generated by the collective magnetic dipole (MD) resonance excited in the subdiffractive periodic systems. Such a quasi-BIC MD state can be excited directly under normal plane wave incidence and leads to a strong near-field enhancement to further boost the nonlinear process, resulting in a 500-fold enhancement of the third-harmonic emission experimentally. Due to sharp spectral features and asymmetry of the unit cell, it allows for effective tailoring of the nonlinear emissions over spectral or polarization responses. Dynamical nonlinear image tuning is experimentally demonstarted via polarization and wavelength control. The results pave the way for nanophotonics applications such as tunable displays, nonlinear holograms, tunable nanolaser, and ultrathin nonlinear nanodevices with various functionalities.
144 citations
TL;DR: All‐photonic cryptographic primitives by solution printing of organic nanolaser arrays with size‐dependent dual lasing emission with high entropy facilitate their cryptographic implementation in secure communication with high throughput, efficiency, and low cost.
Abstract: Next-generation high-security cryptography and communication call for nondeterministic generation and efficient authentication of unclonable bit sequences. Physical unclonable functions using inherent randomness in material and device fabrication process have emerged as promising candidates for realizing one-way cryptographic systems that avoid duplication and attacks. However, previous approaches suffer from the tradeoffs between low-efficiency fabrication and complicated authentication. Here, all-photonic cryptographic primitives by solution printing of organic nanolaser arrays with size-dependent dual lasing emission are reported. The stochastic distribution of organic solution into discrete capillary bridges, triggered by high-rate solvent evaporation, on a periodic topographical template yields organic single crystals with regulated position, alignment, and random size, which ensures high entropy. Stimulated emission from different vibrational sublevels and the intrinsic self-absorption effect permit size-dependent dual-wavelength lasing emission at wavelengths of 660 and/or 720 nm, which can be efficiently encoded into quaternary cryptographic keys with high reliability. High entropy, solution-processed programming and all-photonic authentication of random organic nanolaser arrays facilitate their cryptographic implementation in secure communication with high throughput, efficiency, and low cost.
57 citations
TL;DR: A monolithically integrated in-plane InP/InGaAs nanolaser array on (001) silicon-on-insulator (SOI) platforms with emission wavelengths covering the entire C band is reported.
Abstract: A compact, efficient, and monolithically grown III–V laser source provides an attractive alternative to bonding off-chip lasers for Si photonics research. Although recent demonstrations of microlasers on (001) Si wafers using thick metamorphic buffers are encouraging, scaling down the laser footprint to nanoscale and operating the nanolasers at telecom wavelengths remain significant challenges. Here, we report a monolithically integrated in-plane InP/InGaAs nanolaser array on (001) silicon-on-insulator (SOI) platforms with emission wavelengths covering the entire C band (1.55 μm). Multiple InGaAs quantum wells are embedded in high-quality InP nanoridges by selective-area growth on patterned (001) SOI. Combined with air-cladded InP/Si optical cavities, room-temperature operation at multiple telecom bands is obtained by defining different cavity lengths with lithography. The demonstration of telecom-wavelength monolithic nanolasers on (001) SOI platforms presents an important step towards fully integrated Si photonics circuits.
48 citations
TL;DR: A hybrid graphene-insulator-metal (GIM) structure that can modulate the surface plasmon polariton (SPP) dispersion characteristics and thus influence the performance of plAsmonic nanolasers is proposed.
Abstract: Graphene is a two-dimensional (2D) structure that creates a linear relationship between energy and momentum that not only forms massless Dirac fermions with extremely high group velocity but also e...
40 citations
TL;DR: In this article, the authors have shown that FA perovskites have outstanding optoelectronic properties in solar cells and light-emitting diodes, but their development on nanolaser application has rarely been ex...
Abstract: Formamidinium (FA) perovskites have exhibited outstanding optoelectronic properties in solar cells and light-emitting diodes. However, their development on nanolaser application have rarely been ex...
32 citations
TL;DR: This work considers a laser as an open plasmonic resonator equipped with an active region, and uses the mathematically grounded approach called the lasing eigenvalue problem (LEP) for the set of the Maxwell equations and the boundary and radiation conditions.
Abstract: Results from the electromagnetic modeling of the threshold conditions of hybrid plasmon modes of a laser based on a silver nanotube with an active core and covered with an active shell are presented. We study the modes of such a nanolaser that have their emission wavelengths in the visible-light range. Our analysis uses the mathematically grounded approach called the lasing eigenvalue problem (LEP) for the set of the Maxwell equations and the boundary and radiation conditions. As we study the modes exactly at the threshold, there is no need to invoke nonlinear and quantum models of lasing. Instead, we consider a laser as an open plasmonic resonator equipped with an active region. This allows us to assume that at threshold the natural-mode frequency is real-valued, according to the situation where the losses, in the metal and for the radiation, are exactly balanced with the gain in the active region. Then the emission wavelength and the associated threshold gain can be viewed as parts of two-component eigenvalues, each corresponding to a certain mode. In the configuration considered, potentially there are three types of modes that can lase: the hybrid localized surface plasmon (HLSP) modes of the metal tube, the core modes, and the shell modes. The latter two types can be kept off the visible range in thin enough configurations. Keeping this in mind, we focus on the HLSP modes and study how their threshold gain values change with variations in the geometrical parameters of the nanotube, the core, and the shell. It is found that essentially a single-mode laser can be designed on the difference-type HLSP mode of the azimuth order m = 1, shining in the orange or red spectral region. Furthermore, the threshold values of gain for similar HLSP modes of order m = 2 and 3 can be several times lower, with emission in the violet or blue parts of the spectrum.
32 citations
21 citations
TL;DR: An optical microcavity approach capable of efficient in-plane and out-of-plane confinement of light is presented, which results in a WS2 photoluminescence enhancement by a factor of 10 compared to that of the unstructured substrate at room temperature.
Abstract: Light-matter interactions with two-dimensional materials gained significant attention in recent years, leading to the reporting of weak and strong coupling regimes and effective nanolaser operation with various structures. Particularly, future applications involving monolayer materials in waveguide-coupled on-chip-integrated circuitry and valleytronic nanophotonics require controlling, directing, and optimizing photoluminescence. In this context, photoluminescence enhancement from monolayer transition-metal dichalcogenides on patterned semiconducting substrates becomes attractive. It is demonstrated in our work using focused-ion-beam-etched GaP and monolayer WS2 suspended on hexagonal boron nitride buffer sheets. We present an optical microcavity approach capable of efficient in-plane and out-of-plane confinement of light, which results in a WS2 photoluminescence enhancement by a factor of 10 compared to that of the unstructured substrate at room temperature. The key concept is the combination of interference effects in both the horizontal direction using a bull's-eye-shaped circular Bragg grating and in the vertical direction by means of a multiple-reflection model with optimized etch depth of circular air-GaP structures for maximum constructive interference effects of the applied pump and expected emission light.
19 citations
TL;DR: In the limit of instantaneous gain and absorption saturation, mode locking corresponds to a stable dissipative soliton, which is very well approximated by the coherent state of a quantum mechanical harmonic oscillator.
Abstract: Mode locking is predicted in a nanolaser cavity forming an effective photonic harmonic potential. The cavity is substantially more compact than a Fabry-Perot resonator with a comparable pulsing period, which is here controlled by the potential. In the limit of instantaneous gain and absorption saturation, mode locking corresponds to a stable dissipative soliton, which is very well approximated by the coherent state of a quantum mechanical harmonic oscillator. This property is robust against noninstantaneous material response and nonzero phase-intensity coupling.
17 citations
TL;DR: In this paper, the fabrication of ordered arrays of InGaN/GaN nanowire quantum disks by a top-down selective area sublimation method using a combination of two-dimensional molecular beam epitaxy was described.
Abstract: We report on the fabrication of ordered arrays of InGaN/GaN nanowire quantum disks by a top-down selective-area sublimation method. Using a combination of two-dimensional molecular beam epitaxy of ...
16 citations
TL;DR: In this paper, a Markov model of semiconductor nanolaser is constructed in order to describe the effects of quantum fluctuations in the dynamics of the laser, in particular by considering the transition to lasing.
Abstract: A Markov model of semiconductor nanolaser is constructed in order to describe finely the effects of quantum fluctuations in the dynamics of the laser, in particular by considering the transition to lasing. Nanolasers are expected to contain only a small number of emitters, whose semiconductor bands are simulated using true carrier energy states. The model takes into account carrier-carrier interactions in the conduction and valence bands, but the result is a huge Markov chain that is often too demanding for direct Monte-Carlo simulation. We introduce here a technique to split the whole chain into two subchains, one referring to thermalization events within the bands and the other to laser photonic events of interest. The model is applied to the analysis of laser transition and enlightens the coexistence of a pulse regime triggered by the quantum nature of the photon with the birth of the known coherent cw regime. This conclusion is highlighted by calculated time traces. We show that on the ultrasmall scale of nanolasers, we are unable to define perfectly the threshold.
TL;DR: In this paper, the basic principles of surface plasmons and nano-resonators are discussed, and the structure and characteristics of several kinds of plasmonic nanolasers are discussed.
Abstract: Photonic devices are becoming more and more miniaturized and highly integrated with the advancement of micro-nano technology and the rapid development of integrated optics. Traditional semiconductor lasers have diffraction limit due to the feedback from the optical system, and their cavity length is more than half of the emission wavelength, so it is difficult to achieve miniaturization. Nanolasers based on surface plasmons can break through the diffraction limit and achieve deep sub-wavelength or even nano-scale laser emission. The improvement of modern nanomaterial preparation processes and the gradual maturity of micro-nano machining technology have also provided technical conditions for the development of sub-wavelength and nano-scale lasers. This paper describes the basic principles of surface plasmons and nano-resonators. The structure and characteristics of several kinds of plasmonic nanolasers are discussed. Finally, the paper looks forward to the application and development trend of nanolasers.
TL;DR: In this paper, the authors presented the design and operation of III-V telecom nanolaser arrays with integrated distributed Bragg reflectors (DBRs) epitaxially grown on industry-standard (001) SOI wafers.
Abstract: Efficient, scalable, bufferless, and compact III–V lasers directly grown on (001)-oriented silicon-on-insulators (SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of III–V telecom nanolaser arrays with integrated distributed Bragg reflectors (DBRs) epitaxially grown on industry-standard (001) SOI wafers. We simulated the mirror reflectance of different guided modes under various mirror architectures, and accordingly devised nanoscale DBR gratings to support high reflectivity around 1500 nm for the doughnut-shaped TE01 mode. Building from InP/InGaAs nanoridges grown on SOI, we fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm2 cross-section and a 20 μm effective cavity length. The direct growth of these bufferless nanoscale III–V light emitters on Si-photonics standard (001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom wavelength regime.
TL;DR: This work provides a new perspective to tune and switch the lasing mode of a nanolaser with precision by the pressure-induced bandgap broadening of a semiconductor.
Abstract: Nanolasers are expected to be integrated on chips as miniaturized coherent light sources, and their application is strongly dependent on their lasing behavior. In this work, the lasing behavior of a single hexagonal ZnO pyramid (HZOP) is tailored by tuning the electronic bandgap with pressure. The lasing of the HZOP nanolaser is dominated by a helical whispering-gallery-like mode, and the lasing threshold varies little with increasing pressure. All lasing peaks of HZOP are limited in a spectral prescreen window on the right shoulder of the fluorescence emission and gradually blue-shift accompanied by several abrupt hops with increasing pressure. This feature of a spectral prescreen window originates from the strong coupling between excitons, and the coupling is described by a dispersive complex refractive index. These results provide a new perspective to tune and switch the lasing mode of a nanolaser with precision by the pressure-induced bandgap broadening of a semiconductor.
TL;DR: This work demonstrates a general approach to nanocavity coupling affording high Q-factors, enabling an ideal miniaturized module for a broad range of applications in optics and optoelectronics, with optical fiber integration.
Abstract: As an ideal miniaturized light source, wavelength-tunable nanolasers capable of emitting a wide spectrum stimulate intense interests for on-chip optoelectronics, optical communications, and spectroscopy. However, realization of such devices remains a major challenge because of extreme difficulties in achieving continuously reversibly tunable gain media and high quality (Q)-factor resonators on the nanoscale simultaneously. Here, exploiting single bandgap-graded CdSSe NWs and a Fabry-Perot/whispering gallery mode (FP/WGM) coupling cavity, a free-standing fiber-integrated reversibly wavelength-tunable nanolaser covering a 42 nm wide spectrum at room temperature with high stability and reproducibility is demonstrated. In addition, a 1.13 nm tuning spectral resolution is realized. The substrate-free device design enables integration in optical fiber communications and information. With reversible and wide, continuous tunability of emission color and precise control per step, our work demonstrates a general approach to nanocavity coupling affording high Q-factors, enabling an ideal miniaturized module for a broad range of applications in optics and optoelectronics, with optical fiber integration.
TL;DR: In this paper, a waveguide Fermi energy was introduced and formulated, for the first time, in this work to cover the waveguide contribution (Ag metal layer) in addition to the active region.
Abstract: This study models quantum dot (QD) plasmonic nanolaser. A metal/semiconductor/metal (MSM) structure was considered to attain plasmonic nanocavity. The active region (semiconductor layers) contains the following: QD, wetting layer (WL), and barrier layers. Band alignment between layers was used to predict their parameters. Momentum matrix element for transverse magnetic (TM) mode in QD structure was formulated. Waveguide Fermi energy was introduced and formulated, for the first time, in this work to cover the waveguide contribution (Ag metal layer) in addition to the active region. The high net modal gain was obtained when the waveguide Fermi energy was considered which meant that the increment comes from the material gain, not from the confinement factor. The obtained results were reasoned the high gain due to the change in waveguide Fermi energy in the valence band, where the valence band QD states are fully occupied that are referring to an efficient hole contribution.
TL;DR: The results revealed that perovskite phase RbPbBr₃ is unstable at room temperature and easily transforms to the photoluminescence (PL)-inactive nonperovskites structure, which provides a new platform to explore the relationship among the tolerance factor, perovSKite structures, and optical properties.
Abstract: Rubidium lead halides (RbPbX3 ), an important class of all-inorganic metal halide perovskites, are attracting increasing attention for photovoltaic applications. However, limited by its lower Goldschmidt tolerance factor t≈0.78, all-inorganic RbPbBr3 has not been reported. Now, the crystal structure, X-ray diffraction (XRD) pattern, and band structure of perovskite-phase RbPbBr3 has now been investigated. Perovskite-phase RbPbBr3 is unstable at room temperature and transforms to photoluminescence (PL)-inactive non-perovskite. The structural evolution and mechanism of the perovskite-non-perovskite phase transition were clarified in RbPbBr3 . Experimentally, perovskite-phase RbPbBr3 was realized through a dual-source chemical vapor deposition and annealing process. These perovskite-phase microspheres showed strong PL emission at about 464 nm. This new perovskite can serve as a gain medium and microcavity to achieve broadband (475-540 nm) single-mode lasing with a high Q of about 2100.
TL;DR: In this article, the intrinsic frequency response of metal-clad nanolasers is characterized using a high-speed photodiode at each modulation frequency, and the theoretical analysis based on the rate equation model and finite element method simulations of the cavity is in full agreement with the measurement results.
Abstract: We report on our initial attempt to characterize the intrinsic frequency response of metal-clad nanolasers. The probed nanolaser is optically biased and modulated, allowing the emitted signal to be detected using a high-speed photodiode at each modulation frequency. Based on this technique, the prospect of high-speed operation of nanolasers is evaluated by measuring the D-factor, which is the ratio of the resonance frequency to the square root of its output power(fR/Pout1/2). Our measurements show that for nanolasers, this factor is an order of magnitude greater than that of other state-of-the-art directly modulated semiconductor lasers. The theoretical analysis, based on the rate equation model and finite element method simulations of the cavity is in full agreement with the measurement results.
TL;DR: The GaInAsP semiconductor photonic crystal nanolaser operates at room temperature by photopumping and emits near-infrared light at a wavelength longer than 1.3 μm as discussed by the authors.
Abstract: The GaInAsP semiconductor photonic crystal nanolaser operates at room temperature by photopumping and emits near-infrared light at a wavelength longer than 1.3 μm. Immersion of the nanolaser in a solution causes its laser characteristics to change. Observation of this phenomenon makes it possible to perform biosensing without a fluorescent label or a chromogenic substrate. The most common phenomenon between many photonic sensors is that the resonance wavelength reflects the refractive index of attached media; an index change of 2.5 × 10−4 in the surrounding liquid can be measured through an emission wavelength shift without stabilization. This effect is applicable to detecting environmental toxins and cell behaviors. The laser emission intensity also reflects the electric charge of surface ions. The intensity varies when an electrolyte or a negatively charged deoxyribonucleic acid (DNA), which is positively or negatively charged in water, is accumulated on the surface. This effect allows us to detect the antigen-antibody reaction of a biomarker protein from only the emission intensity without any kind of spectroscopy. In detecting a small amount of DNA or protein, a wavelength shift also appears from its concentration that is 2–3 orders of magnitude lower than those of the conventional chemical methods, such as the enzyme-linked immuno-solvent assay. It is unlikely that this wavelength behavior at such low concentrations is due to the refractive index of the biomolecules. It is observed that the electric charge of surface ions is induced by various means, including plasma exposure and an electrochemical circuit shifting the wavelength. This suggests that the superhigh sensitivity is also due to the effect of charged ions. Thus, we call this device an iontronic photonic sensor. This paper focuses on such a novel sensing scheme of nanolaser sensor, as an example of resonator-based photonic sensors, in addition to the conventional refractive index sensing.
TL;DR: By using a heavily doped tunnel junction for hole injection, a new nanolaser design with a tunnel junction is experimentally demonstrated that can be operated at temperatures as high as 180 K under CW pumping and may pave the way for other nanoscale cavity design for improved heat management.
Abstract: We experimentally demonstrate the lasing action of a new nanolaser design with a tunnel junction. By using a heavily doped tunnel junction for hole injection, we can replace the p-type contact material of a conventional nanolaser diode with a low-resistance n-type contact layer. This leads to a significant reduction of the device resistance and lowers the threshold voltage from 5 V to around 0.95 V at 77 K. The lasing behavior is verified by the light output versus the injection current (L-I) characterization and second-order coherence function measurements. Because of less Joule heating during current injection, the nanolaser can be operated at temperatures as high as 180 K under CW pumping. The incorporation of heavily doped tunnel junctions may pave the way for other nanoscale cavity design for improved heat management.
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TL;DR: In this article, the first single-particle all-dielectric monolithic nanolaser driven by Mie resonances in visible and near-IR frequency range was demonstrated.
Abstract: All-dielectric subwavelength structures utilizing Mie resonances provide a novel paradigm in nanophotonics for controlling and manipulating light. So far, only spontaneous emission enhancement was demonstrated with single dielectric nanoantennas, whereas stimulated emission was achieved only in large lattices supporting collective modes. Here, we demonstrate the first single-particle all-dielectric monolithic nanolaser driven by Mie resonances in visible and near-IR frequency range. We employ halide perovskite CsPbBr$_3$ as both gain and resonator material that provides high optical gain (up to $\sim 10^4$ cm$^{-1}$) and allows simple chemical synthesis of nanocubes with nearly epitaxial quality. Our smallest non-plasmonic Mie-resonant single-mode nanolaser with the size of 420 nm operates at room temperatures and wavelength 535 nm with linewidth $\sim 3.5$ meV. These novel lasing nanoantennas can pave the way to multifunctional photonic designs for active control of light at the nanoscale.
TL;DR: In this paper, two optically pumped nanorod-based plasmonic nanolasers which composed of two coupled metal-insulator-semiconductor (MIS) hybrid PLASmonic waveguides are investigated.
Abstract: In this article two optically pumped nanorod-based plasmonic nanolasers which composed of two coupled metal-insulator-semiconductor (MIS) hybrid plasmonic waveguides are investigated. In the first structure, a common metallic nanorod is utilized to construct a semiconductor-insulator-metal-insulator-semiconductor (SIMIS) nanostructure while in the second one, the semiconductor part is shared and a metal-insulator-semiconductor-insulator-metal (MISIM) based plasmonic nanolaser is formed. Simulation results based on the finite element method (FEM) show that the SIMIS structure with nanorods’ radii of 40 nm and insulator layer thickness of more than 12.67 nm has lower threshold and simultaneously lower normalized mode area at the lasing wavelength of 490 nm compared to the previously reported MIS nanostructure with the same parameters. The simulation results for the second proposed structure show that the MISIM based spaser has a lower effective mode index and consequently lower wave number at the wavelength of 490 nm, compared to both SIMIS and MIS based nanocavities. This results in less challenge for coupling to on-chip waveguides. The cavity length of the presented nanorod-based spasers has been optimized by considering the lasing mode propagation distance as the nanocavity length which leads to a better light matter interaction enhancement.
TL;DR: In this paper, the authors investigated the impact of fundamental thermal fluctuations on the nanolaser linewidth, and showed that such thermal fluctuations are one of the intrinsic noise sources in a sub-wavelength metal-clad nanoraser, inducing significant linwidth broadening.
Abstract: The capability of nanolasers to generate coherent light in small volume resonators has made them attractive to be implemented in future ultra-compact photonic integrated circuits. However, compared to conventional lasers, nanolasers are also known for their broader spectral linewidths, that are usually on the order of 1 nm. While it is well known that the broad linewidths in light emitters originate from various noise sources, there has been no rigorous study on evaluating the origins of the linewidth broadening for nanolasers to date to the best of our knowledge. In this manuscript, we investigate the impact of fundamental thermal fluctuations on the nanolaser linewidth. We show that such thermal fluctuations are one of the intrinsic noise sources in a sub-wavelength metal-clad nanolaser inducing significant linewidth broadening. We further show that with the reduction of the nanolaser’s dimensions, i.e., mode volume, and the increase of the ambient temperature, such linewidth broadening is enhanced, due to the effect of more pronounced fundamental thermal fluctuation. Specifically, we show that the finite linewidths induced by the thermal fluctuations at room temperature are 1.14nm and 0.16nm, for nanolasers with core radii of 250nm and 750nm, respectively. Although our study was performed on a metallo-dielectric nanolaser, it is reasonable to assume that, in general, other nanolaser architectures are also more prone to thermal fluctuations, and hence exhibit larger finite linewidths than conventional large mode volume lasers.
TL;DR: In this article, the optical characteristics of 3D cavities of plasmonic nanolasers were studied and it was shown that the amplitude and the amplification factor of the near field intensity can be increased by varying the material and thickness of the cavity shell and the direction of the incident wave.
Abstract: The discrete source method is generalized so as to investigate the nonlocal effects in multilayered particles on a substrate. The scheme for constructing an approximate solution and the corresponding numerical algorithm are described in detail. The developed approach is used to study the optical characteristics of 3D cavities of plasmonic nanolasers. It is shown that the amplitude of surface plasmon resonance and the amplification factor of the near-field intensity are reduced significantly when the nonlocal effects are taken into account. It is also shown that the amplification factor can be increased by more than twice by varying the material and thickness of the cavity shell and the direction of the incident wave.
TL;DR: In this paper, a model of the dielectric function in plasmonic quantum dot (QD) nanolaser was presented and the dispersion relation of the QD structure was evaluated.
Abstract: In this work we present a model of the dielectric function in plasmonic quantum dot (QD) nanolaser. A metal/semiconductor/metal structure was considered to attain plasmonic nanocavity with active region containing: QD, wetting layer and barrier. The dielectric function was calculated for both metal (Ag) and QD structure. The propagation constant of surface plasmon polariton (SPP) at the interface of Ag/InAs-QD structure was calculated and the dispersion relation of the plasmonic QD structure was evaluated. For frequencies far from plasma one, the gap between real and imaginary parts was large and a deviation from linear relation was obvious. The SPP field was strongly localized at the interface due to the effect of zero-dimensional QD structure which has application in the super-resolution and best sensitivity in optical imaging. Results of propagation length of SPP ($$L_{spp}$$) also support this. According to the $$L_{spp}$$ results, the damping in the SPP energy was low in the Ag/InAs-QD compared to that in the Ag/air interface. The obtained results are in the range of experimental ones.
TL;DR: In this article, a photoelectrochemical circuit using GaInAsP photonic crystal nanolasers as a working electrode was fabricated and the emission intensity and lasing wavelength were controlled by applying a bias voltage in an ionic solution.
Abstract: In this study, we fabricated a photoelectrochemical circuit using GaInAsP photonic crystal nanolasers as a working electrode. Then, we controlled the emission intensity and lasing wavelength of these nanolasers by applying a bias voltage in an ionic solution. The electrochemical working points for the emission intensity and wavelength were observed for the backward and forward biases, respectively. We confirmed that the emission intensity is primarily changed by the surface recombination, which is enhanced by the Schottky barrier near the solid–liquid interface. The wavelength shift is also assumed to be caused by the Pockels effect in the electric double layer of the solution. This control method can maximize and stabilize the performance of photonic biochemical sensors and also become an option in controlling the laser diode characteristics.In this study, we fabricated a photoelectrochemical circuit using GaInAsP photonic crystal nanolasers as a working electrode. Then, we controlled the emission intensity and lasing wavelength of these nanolasers by applying a bias voltage in an ionic solution. The electrochemical working points for the emission intensity and wavelength were observed for the backward and forward biases, respectively. We confirmed that the emission intensity is primarily changed by the surface recombination, which is enhanced by the Schottky barrier near the solid–liquid interface. The wavelength shift is also assumed to be caused by the Pockels effect in the electric double layer of the solution. This control method can maximize and stabilize the performance of photonic biochemical sensors and also become an option in controlling the laser diode characteristics.
TL;DR: In this paper, a set of low-threshold plasmonic nanolasers working under room temperature in a continuous wave (cw) mode with various nanorod diameters based on the geometry of quantum-wells embedded into a nano-orod placed on a SiO2 coated silver substrate, which is fabricated by means of a cost-effective post-growth approach from a standard InGaN/GaN light emitting diode (LED) epi-wafer.
TL;DR: HZOP nanolaser is a new ultraviolet coherent light source to be integrated on chip at room temperature or higher temperature and Helical whispering-gallery-like mode is proposed to dominate the lasing of HZOP Nanolaser.
Abstract: ZnO nanocavities have advantage to working as optoelectrical nanodevices integrated on chip at high temperature owing to high exciton binding energy. In this work, a single inverted hexagonal ZnO pyramid (HZOP) nanolaser is fabricated successfully by reducing the defect with chemical vapor deposition (CVD). The optical leakage of HZOP is conquered by the inverted configuration to increase the refractive index contrast between ZnO pyramid and surrounding media. Helical whispering-gallery-like mode is proposed to dominate the lasing of HZOP nanolaser. All of the lasing peaks are found to exist at wavelength longer to the fluorescence emission of ZnO, which is ascribed to the large loss represented by the large imaginary part of ZnO refractive index at shorter wavelength. The threshold and linewidth are measured to be 5.27 mJ/cm2 and 0.27 nm, respectively. HZOP nanolaser is a new ultraviolet coherent light source to be integrated on chip at room temperature or higher temperature.
01 Jul 2019
TL;DR: In this paper, the gain from quantum dot plasmonic nanolaser is studied and the waveguide Fermi energy goes deep in the valence band which explains the high gain, where it is shown that covering the structure by a metal makes valence bands fully occupied which refers to an efficient hole contribution.
Abstract: This work studies the gain from quantum dot plasmonic nanolaser. A metal/semiconductor/metal structure was considered to attain plasmonic nanocavity with active region contains: quantum dot, wetting layer and barrier layers. Band alignment between layers was used to predict their parameters. Momentum matrix element for transverse magnetic mode in quantum dot structure was formulated. Waveguide Fermi energy was introduced and formulated, for the first time, in this work to cover the waveguide contribution (Ag metal layer) in addition to the active region. The gain obtained here overcomes the electron scattering losses which promises in high gain, high power and high speed applications. The waveguide Fermi energy goes deep in the valence band which explains the high gain, where it is shown that covering the structure by a metal makes valence band quantum dot states fully occupied which refers to an efficient hole contribution.