Showing papers on "Plasma-enhanced chemical vapor deposition published in 2001"
TL;DR: In this paper, the growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system was reported, and the growth properties were studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure.
Abstract: The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial thickness of the catalyst layer. The alignment of the nanotubes depends on the electric field. Our results indicate that the growth occurs by diffusion of carbon through the Ni catalyst particle, which rides on the top of the growing tube.
1,060 citations
TL;DR: In this paper, a large variety of polymers have been proposed for use as materials with low dielectric constants for applications in microelectronics, including polyimides, heteroaromatic polymers, poly(aryl ether)s, fluoropolymers, hydrocarbon polymers without any polar groups, films deposited from the gas phase by chemical vapor deposition, plasma enhanced chemical vapor (PEVD) and other techniques.
949 citations
TL;DR: In this paper, a very close relationship between the hydrogen-to-carbon (H/C) ratios of source gases and the friction and wear coefficients of the resultant diamond and diamond-like carbon (DLC) films was found.
Abstract: Extensive research on diamond and diamondlike carbon (DLC) films in our laboratory has further confirmed that hydrogen plays an important role in the tribological properties of these films. Specifically, model experiments in inert gas environments revealed a very close relationship between the hydrogen-to-carbon (H/C) ratios of source gases and the friction and wear coefficients of the resultant DLC films. The friction coefficient of films grown in source gases with very high H/C ratios (e.g. 10) was superlow (0.003), whereas that of hydrogen-free DLC films (with essentially zero H/C ratio) was very high (0.65). The friction coefficients of films grown in source gases with intermediate H/C ratios were between 0.003 and 0.65. Experiments also revealed that the frictional properties of these films were very sensitive to test environments. Specifically, when tested in open air, the friction coefficient of hydrogen-free DLC dropped to 0.25, whereas that of highly-hydrogenated DLC increased to 0.06. Fundamental knowledge combined with surface analytical and tribological studies have led to the conclusion that the type and extent of chemical interactions between carbon–carbon, carbon–hydrogen, and carbon–adsorbate atoms at the sliding-contact interfaces determine the friction and wear properties of DLC films.
511 citations
TL;DR: In this paper, the authors present an overview on the present status of SiN for industrial as well as laboratory-type c-Si solar cells, including the fundamental properties of Si-Si interfaces fabricated by PECVD.
411 citations
TL;DR: In this paper, the authors demonstrate a technique that enables high yield, uniform, and preferential growth of perfectly aligned carbon nanotubes by using plasma-enhanced chemical-vapor deposition (PECVD).
Abstract: In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C2H2) to etching (ammonia, NH3) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface.
356 citations
Patent•
31 Jul 2001TL;DR: In this article, a two-step formation process is proposed to provide conformal coverage at both the bottom surface and one or more side walls of an opening for various applications, e.g., high aspect ratio contact liners or storage cell capacitor electrode applications.
Abstract: A two-step formation process provides conformal coverage at both the bottom surface and one or more side walls of an opening for various applications, e.g., high aspect ratio contact liners or storage cell capacitor electrode applications, and provides conformal coverage on any features requiring such coverage. A method for forming a conformal layer in the fabrication of integrated circuits inlcudes providing a substrate assembly including at least a generally horizontal first surface and a second surface extending therefrom. A first portion of the layer is formed selectively on the horizontal first surface during a first period of time and a second portion of the layer is deposited selectively on the second surface during a second period of time. Further, one illustrative process for forming tungsten nitride in the fabrication of integrated circuits includes forming tungsten nitride on the horizontal first surface during a first period of time and depositing tungsten nitride on the second surface during a second period of time by plasma enhanced chemical vapor deposition. The tungsten nitride may be formed on the first surface by plasma enhanced chemical vapor deposition using a first reactant gas mixture including WF6, at least one of NF3 and N2, and H2 with the tungsten nitride being deposited on the second surface by plasma enhanced chemical vapor deposition using a second reactant gas mixture including WF6, at least one of NF3 and N2, H2, and He.
289 citations
TL;DR: In this paper, carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasmaenhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials.
Abstract: Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips.
253 citations
TL;DR: In this paper, the alignment of carbon nanofibers is explained as a result of a feedback mechanism associated with a nonuniform stress that is created across the interface of the catalyst particle with the CNF due to electrostatic forces.
Abstract: We report experimental evidence showing a direct correlation between the alignment of carbon nanofibers (CNFs) prepared by plasma-enhanced chemical-vapor deposition and the location of the catalyst particle during CNF growth. In particular, we find that CNFs that have a catalyst particle at the tip (i.e., growth proceeds from the tip) align along the electric-field lines, whereas CNFs with the particle at the base (i.e., growth proceeds from the base) grow in random orientations. We propose a model that explains the alignment process as a result of a feedback mechanism associated with a nonuniform stress (part tensile, part compressive) that is created across the interface of the catalyst particle with the CNF due to electrostatic forces. Furthermore, we propose that the alignment seen recently in some dense CNF films is due to a crowding effect and is not directly the result of electrostatic forces.
222 citations
Patent•
27 Dec 2001TL;DR: In this paper, the authors describe a substrate processing chamber adapted to deliver two separate gas flows to a processing region, which consists of a substrate support having a substrate receiving surface and a showerhead disposed over the substrate surface.
Abstract: Embodiments of the present invention generally relate to an apparatus and method for delivering two separate gas flows to a processing region. One embodiment of a substrate processing chamber adapted to deliver two separate gas flows to a processing region comprises a substrate support having a substrate receiving surface and a showerhead disposed over the substrate receiving surface. The showerhead includes a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes. The first passageway is adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface. The second passageway is adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface. The substrate processing chamber further includes a plasma power source. The plasma power source may be in electrical communication with the showerhead or with the substrate support to generate a plasma from gases between the showerhead and the substrate support. One embodiment of a method of delivering two separate gas flows to a processing region comprises performing one or more of processes from the group including forming a titanium layer by plasma enhanced chemical vapor deposition, forming a passivation layer by a nitrogen plasma treatment of a titanium layer, forming a composite titanium/titanium nitride layer by an alternating plasma enhanced chemical vapor deposition and a nitrogen plasma treatment, forming a titanium nitride layer by thermal chemical vapor deposition, and plasma treating a titanium nitride layer.
206 citations
Patent•
10 Sep 2001TL;DR: In this article, a method for forming a silicon carbide layer for use in integrated circuit fabrication is described, in which a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electric field is generated using mixed frequency radio frequency (RF) power.
Abstract: A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RF) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.
194 citations
TL;DR: Silicon dioxide films were grown using an atmospheric-pressure plasma jet that was produced by flowing oxygen and helium between two coaxial metal electrodes that were driven by 13.56 MHz radio frequency power as discussed by the authors.
Abstract: Silicon dioxide films were grown using an atmospheric-pressure plasma jet that was produced by flowing oxygen and helium between two coaxial metal electrodes that were driven by 13.56 MHz radio frequency power. The plasma exiting from between the electrodes was mixed with tetraethoxysilane (TEOS), and directed onto a silicon substrate held at 115-350 °C. Silicon dioxide films were deposited at rates ranging from 20±2 to 300±25 nm min-1. The deposition rate increased with decreasing temperature and increasing TEOS pressure, oxygen pressure and RF power. For the latter two variables, the rate increased as follows: Rd∝P0.3O2(RF)1.4. Films grown at 115 °C were porous and contained adsorbed hydroxyl groups, whereas films grown at 350 °C were smooth, dense and free of impurities. These results suggest that the mechanism in the atmospheric pressure plasma is the same as that in low-pressure plasmas.
TL;DR: In this article, the authors describe methods to produce thinner coatings such as high plasma density plasma enhanced chemical vapour deposition (PECVD) methods and the filtered cathodic vacuum arc (FCVA).
TL;DR: In this article, noncrystalline Al2O3 dielectric films have been synthesized by remote plasma enhanced chemical vapor deposition (RPECVD) and deposited on Si(100) substrates using organometallic source gases injected downstream from a He/O2 plasma.
Abstract: Noncrystalline Al2O3 dielectric films have been synthesized by remote plasma enhanced chemical vapor deposition (RPECVD) and deposited on (i) H-terminated Si(100) and (ii) on SiO2 prepared by remote plasma assisted oxidation and RPECVD on Si(100) substrates using organometallic source gases injected downstream from a He/O2 plasma. Chemical composition and morphology of the Al2O3 films and their interfaces have been studied by Auger electron spectroscopy (AES), Fourier transform infrared spectroscopy, nuclear resonance profiling (NRP), and x-ray diffraction (XRD). Previous studies in which Al2O3 was deposited by thermal CVD, rapid thermal CVD, (RTCVD), direct PECVD, and physical vapor deposition generally resulted in relatively thick SiO2 or Al-silicate interfacial layers which impact adversely on the highest attainable capacitance. In line AES and NRP indicate the as-deposited RPECVD films are fully oxidized on deposition, and their interfaces can be chemically abrupt with Si oxide or Al silicate interfac...
TL;DR: A comprehensive review on the recent literature of boron carbide CVD can be found in this article, where the status of the theoretical modeling and the developments on the experimental processes are reported.
Abstract: Boron carbide is an important non-metallic material with outstanding hardness, excellent mechanical, thermal and electrical properties. Its low density, high chemical inertness and neutron capture section make boron carbide an attractive material for micro-electronic, nuclear, military, space and medical applications. Boron carbide based materials are widely deposited by chemical vapor deposition methods (CVD). This paper provides a comprehensive review on the recent literature of boron carbide CVD. Structure, properties and potential application areas of this material are also reviewed. The status of the theoretical modeling of boron carbide deposition and the developments on the experimental processes are reported. It was evident from this review that extensive research still remains to be done on the modeling of CVD boron carbides. Majority of the reviewed published research papers deals with characterization, and growth rate of deposited boron carbide phases. Some thermodynamic modeling based on Gibbs free energy minimization were attempted in classical CVD systems. However, these models were often not able to represent the actual growth mechanism. No significant modeling work has been reported in other CVD systems such as plasma enhanced chemical vapor deposition (PECVD), hot filament chemical vapor deposition (HFCVD), synchrotron radiation chemical vapor deposition (SRCVD). Reliable thermo-chemical data for boron carbides with various stoichiometries are also needed to study and model actual deposition reaction mechanisms of such complex systems.
TL;DR: In this article, the bonding properties of low-dielectric-constant (low-k) fluorine-incorporated silicon oxide (SiOF) and carbon-influenced silicon oxide(SiOC) films prepared by plasma enhanced chemical vapor deposition were investigated by Fourier transform infrared spectroscopy (FTIR).
Abstract: Bonding characteristics of low-dielectric-constant (low-k) fluorine-incorporated silicon oxide (SiOF) and carbon-incorporated silicon oxide (SiOC) films prepared by plasma enhanced chemical vapor deposition were investigated by Fourier transform infrared spectroscopy (FTIR). The frequency of Si–O stretching vibration mode in SiOF film shifted to higher wave number (blueshift) with the increase of fluorine incorporation, while that in SiOC film shifted to lower wave number (redshift) as the carbon content increased. In N2-annealed SiOC film, the Si–O stretching frequency slightly shifted to lower wave number. To elucidate these phenomena, we have developed the “bonding structure model” based on the electronegativity of an atom. The frequency shifts observed in the FTIR spectra of SiOF and SiOC films were well explained by this model.
Patent•
26 Apr 2001TL;DR: In this paper, the authors proposed a mixture of a N-containing chemical precursor with a Si-containing precursor that contains less than 9.5 weight % hydrogen atoms, which they called preferred chemical precursor.
Abstract: Low hydrogen-content silicon nitride materials are deposited by a variety of CVD techniques, preferably thermal CVD and PECVD, using chemical precursors that contain silicon atoms, nitrogen atoms, or both. A preferred chemical precursor contains one or more N—Si bonds. Another preferred chemical precursor is a mixture of a N-containing chemical precursor with a Si-containing chemical precursor that contains less than 9.5 weight % hydrogen atoms. A preferred embodiment uses a hydrogen source to minimize the halogen content of silicon nitride materials deposited by PECVD.
TL;DR: In this article, a triple junction between nanotubes, substrate, and vacuum is proposed to explain the emission characteristics of short and stubby carbon nanotube with diameters of 200 nm and heights of 0.7 μm.
Abstract: Electron emission from vertically aligned carbon nanotubes grown by plasma enhanced chemical vapor deposition has been measured using a parallel plate anode and a 1 μm tungsten probe. The field emission characteristics were measured as a function of the nanotube diameter, length, and areal density. It was found that less densely populated “short and stubby” nanotubes with diameters of 200 nm and heights of 0.7 μm showed the best emission characteristics with a threshold voltage of 2 V/μm and saturation emission current density of 10 mA/cm2. A triple junction between nanotube, substrate, and vacuum is proposed to explain our results.
TL;DR: In this article, excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained.
Abstract: Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence of the effective surface recombination velocity, Seff, on deposition temperature, total pressure and methane (CH4) to silane (SiH4) ratio has been studied for these films using lifetime measurements made with the quasi-steady-state photoconductance technique. The dependence of the effective lifetime, τeff, on the excess carrier density, Δn, has been measured and also simulated through a physical model based on Shockley–Read–Hall statistics and an insulator/semiconductor structure with fixed charges and band bending. A Seff at the a-SiCx:H/c-Si interface lower than 30 cm s−1 was achieved with optimized deposition conditions. This passivation quality was found to be three times better than that of noncarbonated amorphous silicon (a-Si:H) films deposited under equivalent conditions.
TL;DR: In this paper, the surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasmaenhanced chemical vapour deposition (PECVD) on low resistivity (1 ǫ) p-type silicon solar cell substrates have been investigated.
TL;DR: In this paper, a high-resolution TEM image of a carbon onion is presented, showing discontinuous curved lines around the edge of the onion cage, reflecting the wavy behavior of carbon onions.
TL;DR: Bower et al. as discussed by the authors showed that the formation mechanism of aligned CNTs depends significantly on the catalyst support material as well as the catalyst material itself, and that the selective supply of positive ions to CNT tips was possibly responsible for the alignment of growing CNT.
Abstract: Direct-current plasma-enhanced chemical vapor deposition (CVD) with mixtures of acetylene and ammonia was optimized to synthesize aligned carbon nanotubes (CNTs) on Co- or Ni-covered W wires with regard to wire temperature, wire diameter, gas pressure, and sample bias. A phase diagram of CNT growth was established experimentally in this optimization process. It was revealed by transmission electron microscopy that Co-catalyzed CNTs encapsulated a Co carbide nanoparticle at their tip, disagreeing with a previous report that Co particles were located at the base of CNTs CVD grown on Co-covered Si substrates [C. Bower et al., Appl. Phys. Lett. 77, 2767 (2000)]. This leads to the conclusion that the formation mechanism of aligned CNTs depends significantly on the catalyst support material as well as the catalyst material itself. Since the sample bias strongly affected the morphology of CNTs, the selective supply of positive ions to CNT tips was possibly responsible for the alignment of growing CNTs.
TL;DR: In this paper, two kinds of as-deposited films have been studied; unbiased (diode reactor) and biased ones (triode reactor), according to their properties and their response to specific gases such as ethanol.
Abstract: SnO2 thin films are elaborated by a PECVD process in a RF glow discharge reactor. Two kinds of as-deposited films have been studied; unbiased (diode reactor) and biased ones (triode reactor) according to their properties and their response to specific gases such as ethanol. Characterization of the films are carried out by different techniques: FTIR, AES, X-ray diffraction, AFM in order to explain the modifications generated by the bias voltage. The detection results show best sensitivities (S=Ra/Rs) for unbiased films to ethanol at 450°C (S=45 for 10 ppm).
TL;DR: In this paper, the dielectric properties of carbon-incorporated silicon oxide (SiOC) films deposited by plasma enhanced chemical vapor deposition (PECVD), using a bis-trimethylsilylmethane (THM) precursor, were compared with the silicon oxide thermally grown in a furnace (thermal oxide) and also with oxide deposited by PECVD using a TEOS precursor (PE-TEOS oxide).
Abstract: Dielectric properties of carbon-incorporated silicon oxide (SiOC) films deposited by plasma enhanced chemical vapor deposition (PECVD), using a bis-trimethylsilylmethane precursor, were compared with the dielectric properties of silicon oxide thermally grown in a furnace (thermal oxide) and also with oxide deposited by PECVD using a tetraethoxysilane (TEOS) precursor (PE-TEOS oxide). The electronic contribution to the dielectric constant of the three oxide films was calculated from their refractive indices measured at 632.8 nm by ellipsometry. Ionic contributions were computed from their IR reflection spectra, measured at 650–4000 cm−1, by using the Kramers–Kronig relation. The dipolar contribution was qualitatively analyzed from temperature dependence of the polarizability, on a per unit volume basis. The dielectric constant of the SiOC films, which was measured at 1 MHz, decreased from 4.2 to 2.3 as the carbon content increased from 0 to 19.6 at. %. Although there was a significant reduction of the diel...
Patent•
IBM1
TL;DR: In this paper, a method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition (PECVD) process utilizing plasma enhanced chemical vapor (PEVC) process is disclosed.
Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide.
Patent•
IBM1
TL;DR: In this paper, a low dielectric constant, multiphase material which can be used as an interconnect dielectrics in IC chips is disclosed, using a plasma enhanced chemical vapor deposition technique.
Abstract: A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.
TL;DR: In this article, a very high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) method was used for the deposition of hydrogenated microcrystalline Si (μc-Si) at working pressure from 0.5 to 4 Torr.
TL;DR: In this article, an innovative technique based on reactive ion etching (RIE) in oxygen plasma is also presented, along with a staining method, which render even sub-μm coating defects visible.
Abstract: Growing demands for increased shelf-life of food products and chemical inertia of the contact surfaces have stimulated development of polymers with improved high-barrier properties. Our objectives in this article are (1) to describe experimental results on Plasma-enhanced chemical vapor deposition (PECVD) and its importance to produce thin layers of inorganic glassy barrier materials for food, pharmaceutical, and organic display applications; (2) despite the thereby greatly enhanced quality of film or rigid packaging material, some residual coating defects result in less-than-perfect gas, moisture and aroma barriers: an innovative technique based on reactive ion etching (RIE) in oxygen plasma is also presented, along with a staining method, which render even sub-μm coating defects visible. Data are shown for oxygen transmission rate on virgin and defective coatings, and the industrial context and applications are presented.
TL;DR: In this article, structural and optical properties of microcrystalline and nanocrystalline diamond (MCD and NCD, respectively) films were compared by SEM, Raman spectroscopy, XRD, and AFM.
TL;DR: In this article, the electrical properties of the MOM capacitance were investigated by means of currentvoltage and capacitance-voltage characteristics in the 100 Hz-1 MHz frequency range, and the conduction mechanism changed from Schottky emission, for the LPCVD material, to Poole-Frenkel current for the PECVD material.
Abstract: Amorphous Ta2O5 films were deposited by low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) at temperatures below 450 °C. These films were used to fabricate metal–oxide–metal (MOM) structures with titanium nitride (TiN) electrodes. The electrical properties of the MOM capacitance were investigated by the means of current–voltage and capacitance–voltage characteristics in the 100 Hz–1 MHz frequency range. It is shown that the conduction mechanism changed from Schottky emission, for the LPCVD material, to Poole–Frenkel current for the PECVD material. The roughness of the bottom electrode, as determined by atomic force microscopy measurements, is found to impact the leakage current. For the LPCVD material the capacitance exhibits a strong dependency on the applied bias and the frequency. For the PECVD material, only a small variation of the capacitance is observed when the bias is increased, with almost no frequency dependency. A clear correlation between the ...
TL;DR: In this paper, the authors used a high plasma density source known as the electron cyclotron wave resonance source to prepare films with higher sp3 content and lower hydrogen content, and found that it is possible to produce relatively hard, low stress, low friction, almost humidity insensitive a-C1−x6:H allo...
Abstract: The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on hydrogenated amorphous carbon–silicon alloys (a-C1−xSix:H) deposited by rf plasma enhanced chemical vapor deposition. This method gives alloys with sizeable hydrogen content and only moderate hardness. Here we use a high plasma density source known as the electron cyclotron wave resonance source to prepare films with higher sp3 content and lower hydrogen content. The composition and bonding in the alloys is determined by x-ray photoelectron spectroscopy, Rutherford backscattering, elastic recoil detection analysis, visible and ultraviolet (UV) Raman spectroscopy, infrared spectroscopy, and x-ray reflectivity. We find that it is possible to produce relatively hard, low stress, low friction, almost humidity insensitive a-C1−xSix:H allo...