E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
More filters
Journal ArticleDOI
Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline
Michael Clairotte,Thomas Adam,A. A. Zardini,U. Manfredi,Giorgio Martini,A. Krasenbrink,Aurore Vicet,Eric Tournié,Covadonga Astorga +8 more
Journal ArticleDOI
On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells
M.-A. Pinault,Eric Tournié +1 more
TL;DR: In this article, temperature-dependent photoluminescence (PL) spectroscopy as-grown GaInNAs, InGaAs, and GaAsN quantum wells (QWs) embedded in a GaAs matrix was investigated.
Journal ArticleDOI
Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range
Gunther Roelkens,Utsav D. Dave,Alban Gassenq,Nannicha Hattasan,Chen Hu,Bart Kuyken,François Leo,Aditya Malik,Muhammad Muneeb,Eva Ryckeboer,Dorian Sanchez,Sarah Uvin,Ruijun Wang,Zeger Hens,Roel Baets,Yosuke Shimura,Federica Gencarelli,Benjamin Vincent,Roger Loo,Joris Van Campenhout,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié,Xia Chen,Milos Nedeljkovic,Goran Z. Mashanovich,Li Shen,Noel Healy,Anna C. Peacock,Xiaoping Liu,Richard M. Osgood,William M. J. Green +31 more
TL;DR: In this paper, a silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range is discussed, where the strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the tele communication wavelength range and the midinfrared.
Journal ArticleDOI
Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm.
Eva Ryckeboer,Alban Gassenq,Muhammad Muneeb,Nannicha Hattasan,Shibnath Pathak,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié,Wim Bogaerts,Roel Baets,Gunther Roelkens +10 more
TL;DR: Good performance of the miniature spectrometers over all operational wavelengths which paves the way to on-chip absorption spectroscopy in this wavelength range.
Journal ArticleDOI
Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
TL;DR: In this paper, the influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga(In)(N)As ternary and quaternary quantum wells (QWs) confined by various barrier layers is investigated.